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PDF BDW42 Data sheet ( Hoja de datos )
| Número de pieza | BDW42 | |
| Descripción | Darlington Complementary Silicon Power Transistors | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDW42/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
• High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) — BDW46
VCEO(sus) = 100 Vdc (min.) — BDW42/BDW47
• Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
• Monolithic Construction with Built–In Base Emitter Shunt resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BDW42
BDW46 BDW47
80 100
80 100
5.0
15
0.5
85
0.68
– 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
Max Unit
1.47 _C/W
BDNWPN42*
PNP
BDW46
BDW47*
*Motorola Preferred Device
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
85 WATTS
CASE 221A–06
TO–220AB
90
80
70
60
50
40
30
20
10
0
25 50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©3M–2ot1o2rola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1 page  
BDW42 BDW46 BDW47
+ 5.0 + 5.0
v+ 4.0 *IC/IB 250
+ 3.0
+ 2.0
25°C to 150°C
v+ 4.0
*IC/IB 250
+ 3.0
+ 2.0
+ 25°C to 150°C
+ 1.0 + 1.0
– 55°C to 25°C
0
0
– 1.0 *θVC for VCE(sat)
– 2.0
– 3.0 θVB for VBE
– 4.0
25°C to 150°C
– 55°C to 25°C
– 1.0 *θVC for VCE(sat)
– 2.0
– 3.0
θVB for VBE
– 55°C to + 25°C
+ 25°C to 150°C
– 4.0
– 55°C to +25°C
– 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
– 5.0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
105
REVERSE
104
VCE = 30 V
103
FORWARD
105
REVERSE
104
VCE = 30 V
103
FORWARD
102
TJ = 150°C
101
102
TJ = 150°C
101
100°C
100 25°C
10– 1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
100 100°C
10– 1 25°C
– 0.6 – 0.4 – 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut–Off Region
NPN
BDW42
COLLECTOR
PNP
BDW46
BDW47
COLLECTOR
BASE
[ [8.0 k 60
BASE
[ [8.0 k 60
EMITTER
Figure 14. Darlington Schematic
EMITTER
3–216
Motorola Bipolar Power Transistor Device Data
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BDW42.PDF ] | |
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