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BDW42 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 BDW42은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BDW42 기능
기능 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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BDW42 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BDW42 − NPN, BDW46,
BDW47 − PNP
BDW42 and BDW47 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc
Monolithic Construction with Built−In Base Emitter Shunt resistors
TO−220AB Compact Package
Pb−Free Packages Are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BDW46
BDW42, BDW47
Collector-Base Voltage
BDW46
BDW42, BDW47
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
80
100
80
100
5.0
15
0.5
85
0.68
−55 to +150
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.47 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
BDWxx
AYWWG
BDWxx =
A=
Y=
WW =
G=
Device Code
x = 42, 46, or 47
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BDW42
BDW42G
TO−220AB
TO−220AB
(Pb−Free)
50 Units/Rail
50 Units/Rail
BDW46
BDW46G
TO−220AB
TO−220AB
(Pb−Free)
50 Units/Rail
50 Units/Rail
BDW47
BDW47G
TO−220AB
TO−220AB
(Pb−Free)
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 12
Preferred devices are ON Semiconductor recommended
choices for future use and best overall value
Publication Order Number:
BDW42/D




BDW42 pdf, 반도체, 판매, 대치품
BDW42 − NPN, BDW46, BDW47 − PNP
ACTIVE−REGION SAFE OPERATING AREA
50
20
10 TJ = 25°C
5.0
0.1 ms
1.0 ms
0.5 ms
2.0
SECOND BREAKDOWN LIMIT dc
BONDING WIRE LIMIT
1.0 THERMAL LIMITED
0.5 @ TC = 25°C (SINGLE PULSE)
50
20
10 TJ = 25°C
5.0
0.1 ms
1.0 ms
0.5 ms
SECOND BREAKDOWN LIMIT
2.0
BONDING WIRE LIMIT
dc
1.0 THERMAL LIMITED
0.5 @ TC = 25°C (SINGLE PULSE)
0.2
0.1
0.05
1.0
BDW42
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
1.0
BDW46
BDW47
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. BDW42
Figure 6. BDW46 and BDW47
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
TJ(pk) = 200_C; TC is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
BDW46, 47 (PNP)
BDW42 (NPN)
2.0 5.0 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 7. Small−Signal Current Gain
300
200
100
70
50
30
0.1 0.2
TJ = + 25°C
Cob
Cib
BDW46, 47 (PNP)
BDW42 (NPN)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
50 100
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4

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BDW42 전자부품, 판매, 대치품
BDW42 − NPN, BDW46, BDW47 − PNP
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
Q
H
Z
B
4
1 23
F
T
A
−T−
SEATING
PLANE
C
S
U
K
L
V
G
N
D
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 −−−
Z −−− 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 −−−
−−− 2.04
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
BDW42/D

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