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Datasheet BDW93 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BDW93Silicon NPN Power Transistors

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification BDW93/A/B/C DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW94/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING PIN 1 2 3 DESCRIPTION Base Collec
SavantIC
SavantIC
transistor
2BDW93Darlington Transistors

Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat)
Multicomp
Multicomp
transistor
3BDW93POWER TRANSISTORS(12A/45-100V/80W)

A A A A
Mospec Semiconductor
Mospec Semiconductor
transistor
4BDW93NPN SILICON POWER DARLINGTONS

BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK SEPTEMBER 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 75
Power Innovations Limited
Power Innovations Limited
data
5BDW93Hammer Drivers/ Audio Amplifiers Applications

BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor
amplifier


BDW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BDW21Bipolar NPN Device

BDW21 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max
Seme LAB
Seme LAB
data
2BDW21CBipolar NPN Device in a Hermetically sealed TO3 Metal Package

BDW21C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma
Seme LAB
Seme LAB
data
3BDW22Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

BDW22 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max
Seme LAB
Seme LAB
data
4BDW23NPN SILICON POWER DARLINGTONS

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at
Power Innovations Limited
Power Innovations Limited
data
5BDW23Hammer Drivers/ Audio Amplifiers Applications

BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor
amplifier
6BDW23AHammer Drivers/ Audio Amplifiers Applications

BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor
amplifier
7BDW23ANPN SILICON POWER DARLINGTONS

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at
Power Innovations Limited
Power Innovations Limited
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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