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Datasheet BDW93C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BDW93CSilicon NPN Power Transistors

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification BDW93/A/B/C DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW94/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING PIN 1 2 3 DESCRIPTION Base Collec
SavantIC
SavantIC		transistor
2BDW93CDarlington Transistors

Darlington Transistors BDW93, BDW94 Series Features: Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B 100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat)
Multicomp
Multicomp		transistor
3BDW93CNPN EPITAXIAL DARLINGTON TRANSISTOR

NPN 型外延达林顿晶体管 NPN EPITAXIAL DARLINGTON TRANSISTOR R BDW93C 主要参数 MAIN CHARACTERISTICS 封装 Package IC VCEO PC(TO-220C) 12A 100V 80W 用途 z 发动机点火 z 高频开关电源 z 高频功率变换 z 一般功率放大电路 APPLICATIONS z Engine ignition z High fre
JILIN SINO
JILIN SINO		transistor
4BDW93CCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

® BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93C is a silicon E
STMicroelectronics
STMicroelectronics		transistor
5BDW93CHammer Drivers/ Audio Amplifiers Applications

BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor		amplifier


BDW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BDW21Bipolar NPN Device

BDW21 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max
Seme LAB
Seme LAB		data
2BDW21CBipolar NPN Device in a Hermetically sealed TO3 Metal Package

BDW21C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma
Seme LAB
Seme LAB		data
3BDW22Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

BDW22 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max
Seme LAB
Seme LAB		data
4BDW23NPN SILICON POWER DARLINGTONS

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at
Power Innovations Limited
Power Innovations Limited		data
5BDW23Hammer Drivers/ Audio Amplifiers Applications

BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor		amplifier
6BDW23AHammer Drivers/ Audio Amplifiers Applications

BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor		amplifier
7BDW23ANPN SILICON POWER DARLINGTONS

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at
Power Innovations Limited
Power Innovations Limited		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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