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BDX34B 데이터시트 PDF




Power Innovations Limited에서 제조한 전자 부품 BDX34B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BDX34B 자료 제공

부품번호 BDX34B 기능
기능 PNP SILICON POWER DARLINGTONS
제조업체 Power Innovations Limited
로고 Power Innovations Limited 로고


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BDX34B 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
Transistor de puissance PNP darlington
AUGUST 1993 - REVISED MARCH 1997
q Transistor complémentaire conçut pour être utilisé avec
BDX33, BDX33A, BDX33B, BDX33C and
BDX33D
q 70 W à 25°C Température du boîtier
q 10 A Courant continu de collecteur
q Minimum hFE of 750 at 3 V, 3 A
B
C
E
Boîtier TO-220
Vue de dessus
1
2
3
La broche 2 est en contact avec le boîtier
MDTRACA
Valeurs limites absolues à une températeur boîtier de 25°C
Paramètres
Tension Collector-base (IE = 0)
Tension Collector-emetteur (IB = 0)
Tension Emetteur-base
Courant de collecteur en continu
Courant de base en continu
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Température de fonctionnement à l'air libre
Tempétature de stockage
Température de fonctionnement à l'air libre
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
Symbole
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
TJ
T stg
TA
Valeur
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-10
-0.3
70
2
-65 to +150
-65 to +150
-65 to +150
Unité
V
V
V
A
A
W
W
°C
°C
°C




BDX34B pdf, 반도체, 판매, 대치품
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
50000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS135AF
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
TCS135AH
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
1000
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
-1·0
IC - Collector Current - A
Figure 1.
-1·0
-0·5
-10 -0·5 -1·0
TC = -40°C
TC = 25°C
TC = 100°C
-10
IC - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
TCS135AJ
TC = -40°C
TC = 25°C
-2·5 TC = 100°C
-2·0
-1·5
-1·0
IB
tp
-0·5
-0·5
= IC / 100
= 300 µs, duty cycle < 2%
-1·0
IC - Collector Current - A
Figure 3.
-10
PRODUCT INFORMATION
4

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BDX34B 전자부품, 판매, 대치품
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
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관련 데이터시트

부품번호상세설명 및 기능제조사
BDX34

Transistor de puissance PNP darlington

Power Innovations Limited
Power Innovations Limited
BDX34

PNP SILICON POWER DARLINGTONS

Power Innovations Limited
Power Innovations Limited

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