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부품번호 | BDX43 기능 |
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기능 | NPN Darlington transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 8 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BDX42; BDX43; BDX44
NPN Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 02
Philips Semiconductors
NPN Darlington transistors
Product specification
BDX42; BDX43; BDX44
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICES
IEBO
hFE
VCEsat
VCEsat
VCEsat
VBEsat
VBEsat
collector cut-off current
BDX42
BDX43
BDX44
collector cut-off current
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
IE = 0; VCB = 100 V
BDX42
BDX43
BDX44
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector-emitter saturation voltage
VBE = 0; VCE = 45 V
VBE = 0; VCE = 60 V
VBE = 0; VCE = 80 V
IC = 0; VEB = 4 V
VCE = 10 V; see Fig. 2
IC = 150 mA
IC = 500 mA
IC = 500 mA; IB = 0.5 mA
IC = 500 mA; IB = 0.5 mA; Tj = 150 °C
BDX42; BDX44
IC = 1 A; IB = 4 mA
IC = 1 A; IB = 4 mA; Tj = 150 °C
collector-emitter saturation voltage
BDX43
base-emitter saturation voltage
base-emitter saturation voltage
BDX42; BDX44
IC = 1 A; IB = 1 mA
IC = 1 A; IB = 1 mA; Tj = 150 °C
IC = 500 mA; IB = 0.5 mA
IC = 1 A; IB = 4 mA
VBEsat
base-emitter saturation voltage
BDX43
IC = 1 A; IB = 1 mA
fT transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
ton turn-on time
td delay time
tr rise time
toff turn-off time
ts storage time
tf fall time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
MIN. TYP. MAX. UNIT
− − 100 nA
− − 100 nA
− − 100 nA
− − 50 nA
− − 50 nA
− − 50 nA
− − 50 nA
1 000
2 000
−
−
−
−
−
−
−
−
1.3 V
1.3 V
− − 1.6 V
− − 1.6 V
− − 1.6 V
− − 1.8 V
− − 1.9 V
− − 2.2 V
− − 2.2 V
− 200 − MHz
− − 500 ns
− − 200 ns
− − 300 ns
− − 1300 ns
− − 950 ns
− − 350 ns
1997 Jul 02
4
4페이지 Philips Semiconductors
NPN Darlington transistors
Product specification
BDX42; BDX43; BDX44
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 02
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ BDX43.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BDX42 | NPN Darlington transistors | NXP Semiconductors |
BDX42 | (BDX42 - BDX445) SILICON PLANAR DARLINGTON TRANSISTORS | Comset Semiconductors |
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