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PDF BDX53C Data sheet ( Hoja de datos )

Número de pieza BDX53C
Descripción Plastic Medium-Power Complementary Silicon Transistors
Fabricantes ON Semiconductor 
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No Preview Available ! BDX53C Hoja de datos, Descripción, Manual

BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBDX53B, BDX54B
BDX53C, BDX54C
VCB
Vdc
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak
VEB 5.0 Vdc
IC 8.0 Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
IB 0.2 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25°C
PD
65
W
Derate above 25°C
0.48 W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg −65 to +150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
RqJA
RqJC
70 °C/W
1.92 °C/W
www.onsemi.com
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
13
Base 2 Emitter
Collector
BDX5xy =
A=
Y=
WW =
G=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BDX53B/D

1 page




BDX53C pdf
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
1.5 VBE(sat) @ IC/IB = 250
1.5 VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.0 VBE(sat) @ IC/IB = 250
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 10. “On” Voltages
NPN
BDX53B, BDX53C
+ 5.0
PNP
BDX54B, BDX54C
+ 5.0
+ 4.0 *IC/IB v hFE/3
+ 3.0
+ 2.0
25°C to 150°C
+ 1.0
- 55°C to 25°C
0
- 1.0 *qVC for VCE(sat)
- 2.0
- 3.0 qVB for VBE
- 4.0
25°C to 150°C
- 55 to 150°C
+ 4.0 *IC/IB v hFE/3
+ 3.0
+ 2.0 25°C to 150°C
+ 1.0
- 55°C to 25°C
0
- 1.0 *qVC for VCE(sat)
- 2.0
- 3.0 qVB for VBE
- 4.0
25°C to 150°C
- 55 to 150°C
- 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
- 5.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
5.0 7.0 10
105
REVERSE
104
VCE = 30 V
103
FORWARD
105
REVERSE
104
VCE = 30 V
103
FORWARD
102
TJ = 150°C
101
102
TJ = 150°C
101
100 100°C
100°C
100 25°C
10- 1 25°C
- 0.6 - 0.4 - 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
10- 1
+ 0.6 + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
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