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부품번호 | BF1100 기능 |
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기능 | Dual-gate MOS-FETs | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R
Dual-gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient
BF1100
BF1100R
thermal resistance from junction to soldering point
BF1100
BF1100R
note 1
note 2
Ts = 92 °C
Ts = 78 °C
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
VALUE
500
550
290
360
UNIT
K/W
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
VG2-S(th)
gate 2-source threshold voltage
IDSX drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS = 0; IG1-S = 1 mA
VG1-S = VDS = 0; IG2-S = 1 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 9 V;
ID = 20 µA
VG2-S = 4 V; VDS = 12 V;
ID = 20 µA
VG1-S = 4 V; VDS = 9 V;
ID = 20 µA
VG1-S = 4 V; VDS = 12 V;
ID = 20 µA
VG2-S = 4 V; VDS = 9 V;
RG1 = 180 kΩ; note 1
VG2-S = 4 V; VDS = 12 V;
RG1 = 250 kΩ; note 2
VG2-S = VDS = 0; VG1-S = 12 V
VG1-S = VDS = 0; VG2-S = 12 V
Notes
1. RG1 connects gate 1 to VGG = 9 V; see Fig.27.
2. RG1 connects gate 1 to VGG = 12 V; see Fig.27.
MIN.
13.2
13.2
0.5
0.5
0.3
MAX.
20
20
1.5
1.5
1
UNIT
V
V
V
V
V
0.3 1
V
0.3 1.2 V
0.3 1.2 V
8 13 mA
8 13 mA
− 50 nA
− 50 nA
1995 Apr 25
4
4페이지 Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
handbook,1h6alfpage
ID
(mA)
12
8
4
MLD163
handbook,2h0alfpage
ID
(mA)
15
10
5
R G1 = 100 kΩ
MLD164
147 kΩ
180 kΩ
205 kΩ
249 kΩ
301 kΩ
402 kΩ
511 kΩ
0
0 20 40 60 80
I G1 (µA)
VDS = 9 to 12 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.11 Drain current as a function of gate 1 current;
typical values.
0
04
VG2-S = 4 V.
RG1 connected to VGG.
Tj = 25 °C.
8 12 16
VGG = VDS (V)
Fig.12 Drain current as a function of gate 1 supply
voltage (= VGG) and drain supply voltage;
typical values; see Fig.27.
handbook,1h2alfpage
ID
(mA)
8
MLD165
handbook,1h2alfpage
ID
(mA)
8
MLD166
44
0
0 2 4 6 8 10
VGG (V)
0
0 4 8 12
VGG (V)
VDS = 9 V; VG2-S = 4 V.
RG1 = 180 kΩ (connected to VGG); Tj = 25 °C.
Fig.13 Drain current as a function of gate 1 voltage
(= VGG); typical values; see Fig.27.
VDS = 12 V; VG2-S = 4 V.
RG1 = 250 kΩ (connected to VGG); Tj = 25 °C.
Fig.14 Drain current as a function of gate 1 voltage;
(= VGG); typical values; see Fig.27.
1995 Apr 25
7
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ BF1100.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
BF1100 | Dual-gate MOS-FETs | NXP Semiconductors |
BF1100R | Dual-gate MOS-FETs | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |