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PDF BF1101 Data sheet ( Hoja de datos )
| Número de pieza | BF1101 | |
| Descripción | N-channel dual-gate MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
1 page  
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook,2h0alfpage
ID
(mA)
16
12
8
MGS299
VG2-S = 4 V 3 V
3.5 V
2.5 V
2V
4 1.5 V
1V
0
0 0.4 0.8 1.2 1.6 2
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
handbook,2h0alfpage
ID
(mA)
16
12
8
4
0
0
MGS300
VG1-S = 1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1V
2468
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
handbook1,0h0alfpage
I G1
(µA)
80
MGS301
VG2-S = 4 V 3.5 V
3V
60
2.5 V
40
2V
20
0
0 0.5 1 1.5 2 2.5
VG1-S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
1999 May 14
handbook,4h0alfpage
yfs
(mS)
30
20
MGS302
VG2-S = 4 V
3.5 V
3V
2.5 V
10
2V
0
0 4 8 12 16 20
ID (mA)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a
function of drain current; typical values.
5
5 Page 
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
DB
E AX
y
vM A
e
bp w M B
34
HE
Q
21
b1
e1
A
A1
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.55 0.45
2.1 0.25 0.25
0.2
0.1
0.1
OUTLINE
VERSION
SOT143R
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
1999 May 14
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BF1101.PDF ] | |
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