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부품번호 | BF1101R 기능 |
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기능 | N-channel dual-gate MOS-FETs | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
V(F)S-G1 forward source-gate 1 voltage
V(F)S-G2 forward source-gate 2 voltage
VG1-S (th) gate 1-source threshold voltage
VG2-S (th) gate 2-source threshold voltage
IDSX drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
Note
1. RG1 connects G1 to VGG = 5 V; see Fig.21.
CONDITIONS
VG1-S = VG2-S = 0; ID = 10 µA
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 100 µA
VG1-S = 5 V; VDS = 5 V; ID = 100 µA
VG2-S = 4 V; VDS = 5 V; RG1 = 120 kΩ;
note 1
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 4 V
MIN.
7
7
7
0.5
0.5
0.3
0.3
8
MAX. UNIT
−V
16 V
16 V
1.5 V
1.5 V
1.0 V
1.2 V
16 mA
− 50 nA
− 20 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Xmod
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
input capacitance at gate 2 f = 1 MHz
output capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
f = 800 MHz; YS = YS opt
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
MIN.
25
−
−
−
−
−
85
TYP.
30
2.2
1.6
1.2
25
1.7
−
MAX.
40
2.7
−
−
35
2.5
−
UNIT
mS
pF
pF
pF
fF
dB
dBµV
100 − − dBµV
Note
1. Measured in test circuit of Fig.21.
1999 May 14
4
4페이지 Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
40
handbook, halfpage
I G1
(µA)
30
20
10
MGS307
VGG = 5 V
4.5 V
4V
3.5 V
3V
0
0 2 4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
handbgoaoikn, h0alfpage
reduction
(dB)
− 10
(3) (2) (1)
MGS308
− 20
− 30
− 40
− 50
01234
VAGC (V)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 180 kΩ.
Fig.14 Typical gain reduction as a function of
the AGC voltage; see Fig.21.
handbook1,2h0alfpage
Vunw
(dBµV)
110
MGS309
100
(2) (3)
(1)
90
80
0 10 20 30 40 50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; f = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 180 kΩ.
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values; see Fig.21.
handbook,2h5alfpage
ID
(mA)
20
15
10
(1)
(2)
(3)
MGS310
5
0
0 10 20 30 40 50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 180 kΩ.
Fig.16 Drain current as a function of gain reduction;
typical values; see Fig.21.
1999 May 14
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
BF1101 | N-channel dual-gate MOS-FETs | NXP Semiconductors |
BF1101R | N-channel dual-gate MOS-FETs | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |