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BF1205C 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BF1205C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BF1205C 기능
기능 Dual N-channel dual gate MOS-FET
제조업체 NXP Semiconductors
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BF1205C 데이터시트, 핀배열, 회로
BF1205C
Dual N-channel dual gate MOS-FET
Rev. 01 — 18 May 2004
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package; one with a fully integrated
bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio.
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment.




BF1205C pdf, 반도체, 판매, 대치품
Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
250
Ptot
(mW)
200
001aaa551
150
100
50
0
0 50
Fig 1. Power derating curve.
100 150 200
Ts (°C)
7. Static characteristics
Table 7: Static characteristics
Tj = 25 °C.
Symbol Parameter
Per MOS-FET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
IG1-S
gate1 cut-off current
IG2-S
gate 2 cut-off current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier a
amplifier b
VGS = VDS = 0 V; IG1-S = 10 mA
VGS = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 4 V; VDS(b) = 5 V; RG1 = 150 k
amplifier a; VDS(a) = 5 V
amplifier b
VG2-S = VDS(a) = 0 V
amplifier a; VG1-S(a) = 5 V; ID(b) = 0 A
amplifier b; VG1-S(b) = 5 V; VDS(b) = 0 V
VG2-S = 4 V;
VG1-S(a) = VDS(a) = VDS(b) = 0 V;
VG1-S(b) = 0 V;
[1] RG1 connects gate 1 (b) to VGG = 0 V (see Figure 3).
[2] RG1 connects gate 1 (b) to VGG = 5 V (see Figure 3).
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
[1] 14
[2] 9
-
-
24 mA
17 mA
- - 50 nA
- - 50 nA
- - 20 nA
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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BF1205C 전자부품, 판매, 대치품
Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
40
yfs
(mS)
30
001aaa556
(1)
(2)
20
(3)
10
0
0
(4)
(5)
(6)
8 16 24 32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(a) = 5 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
Fig 6. Forward transfer admittance as a function of
drain current; typical values.
20
ID (a)
(mA)
16
001aaa557
12
8
4
0
0 20 40 60
ID (b) (µA)
VDS(a) = 5 V; VG2-S = 4 V; VDS(b) = 5 V;
VG1-S(b) = 0 V; Tj = 25 °C.
Fig 7. Drain current as a function of internal G1
current (current in pin drain (b) if MOS-FET (b)
is switched off); typical values.
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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