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PDF BCP68-25 Data sheet ( Hoja de datos )
| Número de pieza | BCP68-25 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low VCE(sat)
COMPLEMENTARY TYPE BCP69
PARTMARKING DETAIL
BCP68
BCP68 25
BCP68
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
25
20
5
2
1
2
-55 to +150
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25
V IC=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 20
V IC= 30mA *
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=10µA
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
10 µA
10 µA
0.5 V
VCB=25V
VCB=25V, Tamb=150°C
VEB=5V
IC=1A, IB=100mA*
Base-Emitter Turn-On VBE(on)
Voltage
0.6 V
1.0 V
IC=5A, VCE=10V*
IC=1A, VCE=1V*
Static Forward Current hFE
Transfer Ratio
BCP68
50
63
400
BCP68-25 160 250 400
IC=5mA, VCE=10V*
IC=500mA, VCE=1V*
IC=500mA, VCE=1V*
Transition Frequency fT
100 MHz IC=100mA, VCE=5V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.
3 - 19
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