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BCR16CM 데이터시트 PDF




Mitsubishi Electric Semiconductor에서 제조한 전자 부품 BCR16CM은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BCR16CM 기능
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BCR16CM 데이터시트, 핀배열, 회로
BCR16CM
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
4
Dimensions
in mm
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
φ3.6±0.2
1.0
0.8
2.5 2.5 0.5 2.6
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
1 2 3 Measurement point of
case temperature
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
TO-220
APPLICATION
Contactless AC switches , light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet · electric fan, solenoid drivers,
small motor control, copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=100°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
16
170
121
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999




BCR16CM pdf, 반도체, 판매, 대치품
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140 ALUMINUM AND GREASED
NATURAL CONVECTION
120 120 120 t2.3
100 100 100 t2.3
80 60 60 t2.3
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
103
7
5 DISTRIBUTION T2+, G
110032753275,,,,,,,,21 ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,TEYX,,,,,,,,PAIM,,,,,,,,CPALLE
3
2
T2+,
T2,
G+
G

TYPICAL
EXAMPLE
100
–40
0
40 80 120 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160 NATURAL CONVECTION
140 NO FINS
CURVES APPLY REGARDLESS
120 OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
Feb.1999

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관련 데이터시트

부품번호상세설명 및 기능제조사
BCR16C

MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
BCR16CM

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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

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