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부품번호 | BCW29LT1 기능 |
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기능 | General Purpose Transistors | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
IC
2
BASE
Value
–32
–32
–5.0
–100
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW29LT1
BCW30LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –2.0mAdc, IE = 0 )
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, V EB = 0)
Collector–Emitter Breakdown Voltage
(I C = –10 µAdc, I C = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0 )
(VCB = –32 Vdc, IE = 0, TA = 100°C)
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
–32
–32
–32
–5.0
—
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max Unit
— Vdc
— Vdc
— Vdc
— Vdc
–100
–10
nAdc
µAdc
M7–1/6
LESHAN RADIO COMPANY, LTD.
TYPICAL STATIC CHARACTERISTICS
BCW29LT1 BCW30LT1
400
T J = 125°C
25°C
200
100
80
60
40
0.003 0.005
0.01 0.020.03
– 55°C
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
BCW29LT1
V CE= 1.0 V
V CE= 10 V
2.0 3.0 5.0 7.0
10
I C , COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
20 30 50 70 100
1.0
T A= 25°C
BCW29LT1
0.8
0.6
I C= 1.0 mA 10 mA
50 mA 100 mA
0.4
0.2
0
0.002 0.0050.010.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
I B , BASE CURRENT (mA)
Figure 7. Collector Saturation Region
1.4
T J=25°C
1.2
1.0
0.8
V BE(sat) @ I C /I B = 10
0.6
V @BE(on) V CE= 1.0 V
0.4
0.2
V CE(sat) @ I C /I B = 10
0
0.1
0.2
0.5 1.0
2.0
5.0 10 20
50 100
I C , COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
100
T A = 25°C
PULSE WIDTH =300 ms 350µA
80 DUTY CYCLE<2.0%
300µA
60
40
20
I B= 400 mA
250 µA
200 µA
150 µA
100 µA
50µA
0
0 5.0 10 15 20 25 30 35 40
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Characteristics
1.6
*APPLIES for I C / I B < h FE / 2
0.8
∗ θ VC for V CE(sat)
0
25°C to 125°C
–55°C to 25°C
–0.8
–1.6
θ VB for V BE
25°C to 125°C
–55°C to 25°C
–2.4
0.1
0.2
0.5 1.0 2.0
5.0 10 20
50 100
I C , COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
M7–4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
BCW29LT1 | General Purpose Transistors | Motorola Inc |
BCW29LT1 | General Purpose Transistors | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |