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PDF BCW61DLT1 Data sheet ( Hoja de datos )
| Número de pieza | BCW61DLT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW61BLT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW61BLT1
BCW61CLT1
BCW61DLT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
Value
–32
–32
–5.0
–100
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –32 Vdc)
(VCE = –32 Vdc, TA = 150°C)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
–32 —
–5.0 —
Vdc
Vdc
— –20 nAdc
— –20 µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
50 70 100
1000
700 VCC = –ā3.0 V
500 IC/IB = 10
300
ts
IB1 = IB2
TJ = 25°C
200
100
70
50
tf
30
20
10
–1.0
–ā2.0 –ā3.0 –ā5.0 –ā7.0 –10 –ā20 –ā30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn–Off Time
–ā50 –ā70 –100
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
10
TJ = 25°C
7.0
Cib
5.0
3.0
100 2.0 Cob
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 12. Current–Gain — Bandwidth Product
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
20
50
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
FIGURE 19
DUTY CYCLE, D = t1/t2
P(pk) D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1 (SEE AN–569)
t2
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 14. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BCW61DLT1.PDF ] | |
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