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PDF BCW68G Data sheet ( Hoja de datos )
| Número de pieza | BCW68G | |
| Descripción | PNP Silicon AF Transistors | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PNP Silicon AF Transistors
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 (NPN)
BCW67, BCW68
3
2
1 VPS05161
Type
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
Marking
DAs
DBs
DCs
DFs
DGs
DHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCW67
BCW68
32 45
45 60
55
800
1
100
200
330
150
-65 ... 150
Junction - soldering point1)
RthJS
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001
1 page  
BCW67, BCW68
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 3 BCW 67/68
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00401
10 3 BCW 67/68
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00402
10 1 10 1
55
100 100
55
10 -1
0 12
DC current gain hFE = f (IC)
VCE = 1V
3V
VBE sat
4
10 -1
0
200 400 600 mV 800
VCE sat
10 3 BCW 67/68
5 100 ˚C
h FE
25 ˚C
102 -50 ˚C
5
EHP00403
10 1
5
10 0
10 -1
5 10 0
5 10 1
5 10 2 mA 10 3
ΙC
5
Jul-10-2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCW68G.PDF ] | |
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