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PDF BCX19 Data sheet ( Hoja de datos )
| Número de pieza | BCX19 | |
| Descripción | NPN Medium Power Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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BCX19
NPN Medium Power Transistor
• This device is designed for general purpose amplifiers.
• Sourced from process 38.
3
2
SOT-23
1 Mark: U1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Value
45
50
5.0
500
-55 ~ +150
Units
V
V
V
mW
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CEO
V(BR)CES
ICBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10µA, IC = 0
VCB = 20V, IE = 0
VCB = 20V, IE = 0, TA = 150°C
VEB = 5.0V, IC = 0
45
50
V
V
100 nA
5.0 µA
10 µA
hFE
VCE(sat)
VBE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100mA, VCE = 1.0V
IC = 300mA, VCE = 1.0V
IC = 500mA, VCE = 1.0V
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 1.0V
100
70
40
600
0.62 V
1.2 V
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
300
2.4
417
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BCX19.PDF ] | |
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