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BD242C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD242C
기능 Complementary Silicon Plastic Power Transistors
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BD242C 데이터시트, 핀배열, 회로
BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
High Current Gain − Bandwidth Product
Compact TO−220 AB Package
Epoxy Meets UL94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25°C
Derate above 25°C
Symbol
VCEO
VCES
VEB
IC
ICM
IB
PD
BD241C
BD242B BD242C
80 100
90 115
5.0
3.0
5.0
1.0
40
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature Range
TJ, Tstg
– 65 to + 150
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Human Body Model
HBM
3B
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Machine Model
MM
C
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
RqJA
RqJC
62.5
3.125
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
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POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
COMPLEMENTARY
COLLECTOR 2,4
COLLECTOR 2,4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 1
AYWW
BD24xxG
BD24xx = Device Code
xx = 1C, 2B, or 2C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD241CG
BD242BG
TO−220
(Pb−Free)
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
BD242CG
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BD241C/D




BD242C pdf, 반도체, 판매, 대치품
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3.0
2.0
ts
1.0
0.7 tf @ VCC = 30 V
0.5
0.3
0.2
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
ts= ts - 1/8 tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
2.0 3.0
300
TJ = + 25°C
200
100
Ceb
70
50 Ccb
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 7. Capacitance
500
300 TJ = 150°C
100 25°C
70 - 55°C
50
30
VCE = 2.0 V
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0
2.0
TJ = 25°C
1.6
1.2 IC = 0.3 A
0.8
1.0 A 3.0 A
0.4
0
1.0 2.0
5.0 10 20
50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
1.0 2.0 3.0
+ 2.5
+ 2.0 *APPLIES FOR IC/IB 5.0
TJ = - 65°C TO + 150°C
+ 1.5
+ 1.0
+ 0.5 *qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE
- 2.0
- 2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
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