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부품번호 | BD242C 기능 |
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기능 | Complementary Silicon Plastic Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• High Current Gain − Bandwidth Product
• Compact TO−220 AB Package
• Epoxy Meets UL94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25°C
Derate above 25°C
Symbol
VCEO
VCES
VEB
IC
ICM
IB
PD
BD241C
BD242B BD242C
80 100
90 115
5.0
3.0
5.0
1.0
40
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature Range
TJ, Tstg
– 65 to + 150
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Human Body Model
HBM
3B
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎESD − Machine Model
MM
C
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
RqJA
RqJC
62.5
3.125
°C/W
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
www.onsemi.com
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
COMPLEMENTARY
COLLECTOR 2,4
COLLECTOR 2,4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
MARKING
DIAGRAM
1
2
3
TO−220
CASE 221A
STYLE 1
AYWW
BD24xxG
BD24xx = Device Code
xx = 1C, 2B, or 2C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
BD241CG
BD242BG
TO−220
(Pb−Free)
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
BD242CG
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BD241C/D
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3.0
2.0
ts′
1.0
0.7 tf @ VCC = 30 V
0.5
0.3
0.2
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
2.0 3.0
300
TJ = + 25°C
200
100
Ceb
70
50 Ccb
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 7. Capacitance
500
300 TJ = 150°C
100 25°C
70 - 55°C
50
30
VCE = 2.0 V
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0
2.0
TJ = 25°C
1.6
1.2 IC = 0.3 A
0.8
1.0 A 3.0 A
0.4
0
1.0 2.0
5.0 10 20
50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
1.0 2.0 3.0
+ 2.5
+ 2.0 *APPLIES FOR IC/IB ≤ 5.0
TJ = - 65°C TO + 150°C
+ 1.5
+ 1.0
+ 0.5 *qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE
- 2.0
- 2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BD242 | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
BD242 | PNP SILICON POWER TRANSISTOR | TRSYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |