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BD242C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD242C
기능 PNP SILICON POWER TRANSISTORS
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BD242C 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD241 Series
q 40 W at 25°C Case Temperature
q 3 A Continuous Collector Current
q 5 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 )
Collector-emitter voltage (IC = -30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD242
BD242A
BD242B
BD242C
BD242
BD242A
BD242B
BD242C
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-55
-70
-90
-115
-45
-60
-80
-100
-5
-3
-5
-1
40
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




BD242C pdf, 반도체, 판매, 대치품
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS632AD
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
-10 DC Operation
-1·0
-0·1
-0·01
-1·0
BD242
BD242A
BD242B
BD242C
-10 -100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
-1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AA
50
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
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BD242

PNP SILICON POWER TRANSISTORS

Power Innovations Limited
Power Innovations Limited
BD242

PNP SILICON POWER TRANSISTOR

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