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PDF BD243B Data sheet ( Hoja de datos )
| Número de pieza | BD243B | |
| Descripción | Complementary Silicon Plastic Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
• High Current Gain Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
VCEO
80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
VCB Vdc
80
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 6 Adc
ICM 10 Adc
IB 2.0 Adc
PD
65 W
0.52 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
1.92
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
www.onsemi.com
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
BD24xyG
AY WW
BD24xy =
A=
Y=
WW =
G=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
BD243BG
BD243CG
BD244BG
BD244CG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Publication Order Number:
BD243B/D
1 page  
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
103
VCE = 30 V
102
TJ = 150°C
101 100°C
100 25°C
10-1 IC = ICES
10- 2 REVERSE
FORWARD
10- 3
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
10M
VCE = 30 V
1.0M IC = 10 x ICES
100k IC = 2 x ICES
10k IC ≈ ICES
1.0k
0.1k
20
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40 60 80 100
120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BD243B.PDF ] | |
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