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BD244C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD244C
기능 Complementary Silicon Plastic Power Transistors
제조업체 Motorola Inc
로고 Motorola  Inc 로고 



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BD244C 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD243B/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
Collector – Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
Collector Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B
VCEO(sus) = 100 Vdc (Min) — BD243C, BD244C
High Current Gain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfT = 3.0 MHz (Min) @ IC = 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCompact TO–220 AB Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD243B BD243C
BD244B BD244C
80 100
80 100
5.0
6
10
2.0
65
0.52
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
Max Unit
1.92 _C/W
80
BDN2P4N3B
BD243C*
PNP
BD244B
BD244C*
*Motorola Preferred Device
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 – 100 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




BD244C pdf, 반도체, 판매, 대치품
BD243B BD243C BD244B BD244C
500
300
200 TJ = 150°C
VCE = 2.0 V
100
70 25°C
50
30
20 – 55°C
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
4.0 6.0
2.0
TJ = 25°C
1.6
IC = 1.0 A 2.5 A 5.0 A
1.2
0.8
0.4
0
10 20 30 50
100 200 300 500
1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
VBE(sat) @ IC/IB = 10
1.2
0.8 VBE @ VCE = 4.0 V
0.4 VCE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6 1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
6.0
+ 2.5
+ 2.0 *APPLIES FOR IC/IB 5.0
+ 1.5
+ 1.0
+ 0.5 *θVC FOR VCE(sat)
0
– 0.5
+ 25°C to + 150°C
– 55°C to + 25°C
– 1.0 + 25°C to + 150°C
– 1.5 θVB FOR VBE
– 2.0
– 55°C to + 25°C
– 2.5
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 0.6
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101 100°C
100 25°C
10–1 IC = ICES
10– 2 REVERSE
FORWARD
10– 3
– 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
10M
VCE = 30 V
1.0M IC = 10 x ICES
100k IC = 2 x ICES
10k IC ICES
1.0k
0.1k
20
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40 60 80 100
120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base–Emitter Resistance
4 Motorola Bipolar Power Transistor Device Data

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