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부품번호 | BD244C 기능 |
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기능 | Complementary Silicon Plastic Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
• High Current Gain Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
VCEO
80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
VCB Vdc
80
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 6 Adc
ICM 10 Adc
IB 2.0 Adc
PD
65 W
0.52 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
1.92
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
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6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
BD24xyG
AY WW
BD24xy =
A=
Y=
WW =
G=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
BD243BG
BD243CG
BD244BG
BD244CG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Publication Order Number:
BD243B/D
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
0.1
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
300
TJ = 25°C
VCC = 30 V
200
ts IC/IB = 10
IB1 = IB2
Cib
100
70
tf
Cob
50
TJ = 25°C
0.2 0.4 0.6 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn-Off Time
4.0 6.0
30
0.5
1.0 2.0 3.0 5.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
500
300
200 TJ = 150°C
VCE = 2.0 V
100
70 25°C
50
30
20 - 55°C
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
4.0 6.0
2.0
TJ = 25°C
1.6
IC = 1.0 A 2.5 A 5.0 A
1.2
0.8
0.4
0
10 20 30 50
100 200 300 500
1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
VBE(sat) @ IC/IB = 10
1.2
0.8 VBE @ VCE = 4.0 V
0.4 VCE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6 1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
6.0
+ 2.5
+ 2.0 *APPLIES FOR IC/IB ≤ 5.0
+ 1.5
+ 1.0
+ 0.5 *qVC FOR VCE(sat)
0
- 0.5
- 1.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 1.5 qVB FOR VBE
- 2.0
- 55°C to + 25°C
- 2.5
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 0.6
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BD244 | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
BD244 | PNP SILICON POWER TRANSISTORS | TRSYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |