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부품번호 | BD246C 기능 |
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기능 | PNP SILICON POWER TRANSISTORS | ||
제조업체 | Power Innovations Limited | ||
로고 | |||
전체 6 페이지수
Copyright © 1997, Power Innovations Limited, UK
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD245 Series
q 80 W at 25°C Case Temperature
q 10 A Continuous Collector Current
q 15 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
Collector-emitter voltage (IC = -30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
3
62.5
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS634AC
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
-10 DC Operation
-1·0
-0·1
-0·01
-1·0
BD246
BD246A
BD246B
BD246C
-10 -100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
-1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
TIS633AA
80
60
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BD246 | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
BD246 | PNP SILICON POWER TRANSISTORS | TRSYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |