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BD379 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD379
기능 Medium Power Linear and Switching Applications
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BD379 데이터시트, 핀배열, 회로
BD375/377/379
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD375
: BD377
: BD379
VCEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1 TO-126
1. Emitter 2.Collector 3.Base
Value
50
75
100
45
60
80
5
2
3
1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379
IC = 100mA, IB = 0
45
60
80
V
V
V
BVCBO
Collector-Base
Breakdown Voltage
: BD375
: BD377
: BD379
IC = 100µA, IE = 0
50
75
100
V
V
V
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
tON
tOFF
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: BD375
: BD377
: BD379
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
2 µA
2 µA
2 µA
VEB = 5V, IC = 0
100 µA
VCE = 2V, IC = 0.15A
VCE = 2V, IC = 1A
40
20
375
IC = 1A, IB = 0.1A
1V
VCE = 2V, IC = 1A
1.5 V
VCC = 30V, IC = 0.5A
IB1 = - IB2 = 0.05A
RL = 60
50
500
ns
ns
hFE Classification
Classification
hFE1
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
©2000 Fairchild Semiconductor International
Rev. A, February 2000




BD379 pdf, 반도체, 판매, 대치품
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E

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