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AT49LV010-12TI PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AT49LV010-12TI
기능 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
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AT49LV010-12TI 데이터시트, 핀배열, 회로
AT49(H)BV/(H)LV01
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 55 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30 µs/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-
sipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is
performed by erasing the entire 1 megabit of memory and then programming on a
byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a
program cycle can be optionally detected by the DATA polling feature. Once the end
of a byte program cycle has been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
Pin Configurations
(continued)
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
Type 1
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
1-Megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
0677B-A–9/97
1




AT49LV010-12TI pdf, 반도체, 판매, 대치품
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
AT49LV010
AT49BV010
Operating Modes
AT49HLV
010-55
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
N/A
AT49HBV/
HLV010-70
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
2.7V to 3.6V
AT49HBV/
HLV010-90
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
2.7V to 3.6V
AT49BV/
LV010-12
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
2.7V to 3.6V
AT49BV010-15
0°C - 70°C
-40°C - 85°C
N/A
2.7V to 3.6V
Mode
CE OE WE
Ai
Read
Program(2)
Standby/Write Inhibit
VIL VIL VIH
VIL VIH VIL
VIH X(1) X
Ai
Ai
X
Program Inhibit
X X VIH
Program Inhibit
X VIL X
Output Disable
X VIH X
Product Identification
Hardware
Software(5)
VIL VIL VIH A1 - A16 = VIL, A9 = VH,(3)
A0 = VIL
A1 - A16 = VIL, A9 = VH,(3)
A0 = VIH
A0 = VIL, A1 - A16 = VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
A0 = VIH, A1 - A16 = VIL
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 17H.
5. See details under Software Product Identification Entry/Exit.
DC Characteristics
I/O
DOUT
DIN
High Z
High Z
Manufacturer Code(4)
Device Code(4)
Manufacturer Code(4)
Device Code(4)
Symbol
Parameter
ILI
ILO
ISB1
ISB2
ICC(1)
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1. In the erase mode, ICC is 50 mA.
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -100 µA; VCC = 3.0V
Min Max
10
10
50
1
25
0.6
2.0
0.45
2.4
Units
µA
µA
µA
mA
mA
V
V
V
V
4 AT49(H)BV/(H)LV010

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AT49LV010-12TI 전자부품, 판매, 대치품
AT49(H)BV/(H)LV010
Program Cycle Characteristics
Symbol
tBP
tAS
tAH
tDS
tDH
tWP
tWPH
tEC
Parameter
Byte Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
Program Cycle Waveforms
OE
Min
0
100
100
0
200
200
PROGRAM CYCLE
Typ
30
CE
tWP
WE
tAS tAH
A0-A16
5555
2AAA
tDS
DATA
AA 55
tWPH
tDH
5555
ADDRESS
A0
INPUT
DATA
tBP
Max Units
µs
ns
ns
ns
ns
ns
ns
10 seconds
Chip Erase Cycle Waveforms
OE
CE
tWP tWPH
WE
tAS tAH tDH
A0-A16
5555
2AAA
5555
5555
2AAA
5555
tDS tEC
DATA
AA
BYTE 0
55
BYTE 1
80
BYTE 2
AA
BYTE 3
55
BYTE 4
10
BYTE 5
Note: OE must be high only when WE and CE are both low.
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1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

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1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

ATMEL Corporation
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