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AT49LV020-12JC PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AT49LV020-12JC
기능 2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory
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AT49LV020-12JC 데이터시트, 핀배열, 회로
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 70 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30 µs/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV020 and the AT49LV020 are 3-volt-only, 2 megabit Flash memories
organized as 262,144 words of 8 bits each. Manufactured with Atmel's advanced non-
volatile CMOS technology, the devices offer access times to 70 ns with power dissipa-
tion of just 90 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV/LV020 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV/LV020 is performed by eras-
ing the entire 2 megabits of memory and then programming on a byte by byte basis.
The typical byte programming time is a fast 30 µs. The end of a program cycle can be
optionally detected by the DATA polling feature. Once the end of a byte program cycle
has been detected, a new access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000 cycles.
Pin Configuration
(continued)
Pin Name
A0 - A17
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
VSOP Top View (8 x 14mm) or
TSOP Top View (8 x 20mm)
Type 1
PLCC Top View
2-Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV020
AT49LV020
Rev. 0678C–03/98
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AT49LV020-12JC pdf, 반도체, 판매, 대치품
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
AT49LV020
AT49BV020
AT49BV/LV020-70
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
2.7V to 3.6V
AT49BV/LV020-90
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
2.7V to 3.6V
AT49BV/LV020-12
0°C - 70°C
-40°C - 85°C
3.0V to 3.6V
2.7V to 3.6V
Operating Modes
Mode
CE OE WE
Ai
Read
Program(2)
Standby/Write Inhibit
Program Inhibit
Program Inhibit
Output Disable
Product Identification
VIL VIL VIH
VIL VIH VIL
VIH X(1) X
X X VIH
X VIL X
X VIH X
Ai
Ai
X
Hardware
VIL VIL VIH
A1 - A17 = VIL, A9 = VH(3)
A0 = VIL
A1 - A17 = VIL, A9 = VH,(3)
A0 = VIH
Software(5)
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
A0 = VIL, A1 - A17=VIL
A0 = VIH, A1 - A17=VIL
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: OBH
5. See details under Software Product Identification Entry/Exit.
I/O
DOUT
DIN
High Z
High Z
Manufacturer Code(4)
Device Code (4)
Manufacturer Code(4)
Device Code(4)
DC Characteristics
Symbol Parameter
ILI
ILO
ISB1
ISB2
ICC(1)
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1. In the erase mode, ICC is 50 mA.
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -100 µA; VCC = 3.0V
Min Max Units
10 µA
10 µA
50 µA
1 mA
25 mA
0.6 V
2.0 V
0.45 V
2.4 V
4 AT49BV020

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AT49LV020-12JC 전자부품, 판매, 대치품
AT49BV020
Data Polling Characteristics(1)
Symbol
Parameter
tDH
tOEH
tOE
tWR
Notes:
Data Hold Time
OE Hold Time
OE to Output Delay(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Data Polling Waveforms
WE
CE
OE
tDH
I/O7
tOEH
tOE
HIGH Z
A0-A17
An An
An
Min Typ Max Units
0 ns
10 ns
ns
0 ns
tWR
An An
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
tOEH
tOE
tOEHP
tWR
Notes:
Data Hold Time
OE Hold Time
OE to Output Delay(2)
OE High Pulse
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
WE
Min Typ Max Units
0 ns
10 ns
ns
150 ns
0 ns
CE
OE
I/O6
tOEH
tDH
tOEHP
tOE
HIGH Z
tWR
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
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부품번호상세설명 및 기능제조사
AT49LV020-12JC

2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory

ATMEL Corporation
ATMEL Corporation
AT49LV020-12JI

2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory

ATMEL Corporation
ATMEL Corporation

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