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AT49LV4096-15TC 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT49LV4096-15TC은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AT49LV4096-15TC 자료 제공

부품번호 AT49LV4096-15TC 기능
기능 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


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AT49LV4096-15TC 데이터시트, 핀배열, 회로
Features
Low Voltage Operation
- 2.7V Read
- 5V Program/Erase
Fast Read Access Time - 120 ns
Internal Erase/Program Control
•• Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
•• Word-By-Word Programming - 10 µs/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
•• Low Power Dissipation
- 25 mA Active Current
- 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
Pin Configurations
(continued)
Pin Name
A0 - A17
CE
OE
WE
RESET
VPP
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Program/Erase
Power Supply
Data
Inputs/Outputs
No Connect
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
WE NC
RESET
VPP NC
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
14 13
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
VCC I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
SOIC (SOP)
VPP
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 RESET
43 WE
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 NC
32 GND
31 I/O15
30 I/O7
29 I/O14
28 I/O6
27 I/O13
26 I/O5
25 I/O12
24 I/O4
23 VCC
4-Megabit
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
AT49BV4096/LV4096
0874A–5/97




AT49LV4096-15TC pdf, 반도체, 판매, 대치품
sense: if VCC is below 1.8V (typical), the program function
is inhibited. (b) VCC power on delay: once VCC h a s
reached the VCC sense level, the device will automat-
ically time out 10 ms (typical) before programming. (c)
Program inhibit: holding any one of OE low, CE high or
WE high inhibits program cycles. (d) Noise filter: pulses of
less than 15 ns (typical) on the WE or CE inputs will not
initiate a program cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE, and WE) may be driven from 0 to 5.5V without ad-
versely affecting the operation of the device. The I/O lines
can only be driven from 0 to VCC + 0.6V.
Command Definition (in Hex) (1)
Command Bus
Sequence Cycles
1st Bus
Cycle
Addr Data
2nd Bus
Cycle
Addr Data
3rd Bus
Cycle
Addr Data
4th Bus
Cycle
Addr Data
5th Bus
Cycle
Addr Data
6th Bus
Cycle
Addr Data
Read
Chip Erase
Sector
Erase
1
6
6
Addr DOUT
5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA (4, 5) 30
Word
Program
Boot Block
Lockout (2)
4
6
5555 AA 2AAA 55 5555 A0 Addr DIN
5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID
Entry
Product ID
Exit (3)
Product ID
Exit (3)
3
3
1
5555 AA 2AAA 55 5555 90
5555 AA 2AAA 55 5555 F0
xxxx F0
Notes: 1. The DATA FORMAT in each bus cycle is as follows:
I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
2. The 8K word boot sector has the address range
00000H to 01FFFH.
3. Either one of the Product ID Exit commands
can be used.
4. SA = sector addresses:
SA = 03XXX for PARAMETER BLOCK 1
SA = 05XXX for PARAMETER BLOCK 2
SA = 1FXXX for MAIN MEMORY ARRAY
5. When the boot block programming lockout feature is not
enabled, the boot block and the main memory block will erase
Absolute Maximum Ratings*
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V
4 AT49BV/LV4096
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.

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AT49LV4096-15TC 전자부품, 판매, 대치품
AC Word Load Characteristics
Symbol
tAS, tOES
tAH
tCS
tCH
tWP
tDS
tDH, tOEH
tWPH
Parameter
Address, OE Set-up Time
Address Hold Time
Chip Select Set-up Time
Chip Select Hold Time
Write Pulse Width (WE or CE)
Data Set-up Time
Data, OE Hold Time
Write Pulse Width High
AC Word Load Waveforms
WE Controlled
Min
10
100
0
0
200
100
10
200
AT49BV/LV4096
Max Units
ns
ns
ns
ns
ns
ns
ns
ns
CE Controlled
7

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