Datasheet.kr   

AT52BR1674T 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT52BR1674T은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 AT52BR1674T 자료 제공

부품번호 AT52BR1674T 기능
기능 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


AT52BR1674T 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 30 페이지수

미리보기를 사용할 수 없습니다

AT52BR1674T 데이터시트, 핀배열, 회로
Features
16-Mbit Flash and 2-Mbit/4-Mbit SRAM
Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package
2.7V to 3.3V Operating Voltage
Flash
2.7V to 3.3V Read/Write
Access Time – 85 ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 300 ms
Dual-plane Organization, Permitting Concurrent Read While Program/Erase
– Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
– Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 30 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
Top/Bottom Block Configuration
128-bit Protection Register
SRAM
2-megabit (128K x 16)/4-megabit (256K x 16)
2.7V to 3.3V VCC Operating Voltage
70 ns Access Time
Fully Static Operation and Tri-state Output
1.2V (Min) Data Retention
Industrial Temperature Range
16-megabit
Flash and
2-megabit/
4-megabit
SRAM Stack
Memory
AT52BR1672(T)
AT52BR1674(T)
Preliminary
Device Number
AT52BR1672(T)
AT52BR1674(T)
Flash Plane
Architecture
12M + 4M
12M + 4M
Flash
Configuration
16M (1M x 16)
16M (1M x 16)
SRAM
Configuration
2M (128K x 16)
4M (256K x 16)
Rev. 2604B–STKD–09/02
1




AT52BR1674T pdf, 반도체, 판매, 대치품
16-megabit
Flash
Description
The 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The x16 data
appears on I/O0 - I/O15. The memory is divided into 39 sectors for erase operations.The
device has CE and OE control signals to avoid any bus contention. This device can be read or
reprogrammed using a single 2.7V power supply, making it ideally suited for in-system
programming.
The device powers on in the read mode. Command sequences are used to place the device in
other operation modes such as program and erase. The device has the capability to protect
the data in any sector (see Sector Lockdown section).
The device is segmented into two memory planes. Reads from memory plane B may be per-
formed even while program or erase functions are being executed in memory plane A and vice
versa. This operation allows improved system performance by not requiring the system to wait
for a program or erase operation to complete before a read is performed. To further increase
the flexibility of the device, it contains an Erase Suspend feature. This feature will put the
erase on hold for any amount of time and let the user read data from or program data to any of
the remaining sectors within the same memory plane. There is no reason to suspend the
erase operation if the data to be read is in the other memory plane. The end of a program or
an erase cycle is detected by the Ready/Busy pin, Data Polling or by the toggle bit.
The VPP pin provides faster program/erase times. With VPP at 5.0V or 12.0V, the program and
erase operations are accelerated.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for
writing into the device. This mode (Single Pulse Word Program) is exited by powering down
the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back
to VCC. Erase and Erase Suspend/Resume commands will not work while in this mode; if
entered they will result in data being programmed into the device. It is not recommended that
the six-byte code reside in the software of the final product but only exist in external program-
ming code.
4 AT52BR1672(T)/1674(T)
2604BSTKD09/02

4페이지










AT52BR1674T 전자부품, 판매, 대치품
2604BSTKD09/02
AT52BR1672(T)/1674(T)
operations. When the VPP pin is greater than the VCC supply, the device will select the VPP
input as the power supply for programming and erase operations. The device will allow for
some variations between the VPP input and the VCC power supply in its selection of VCC or VPP
for program or erase operations. If the VPP pin is within 0.3V of VCC for 2.7V < VCC < 3.3V,
then the program or erase operations will use VCC and disregard the VPP input signal. When
the VPP signal is used to accelerate program and erase operations, the VPP must be in the 5V
± 0.5V or 12V ± 0.5V range to ensure proper operation. The Vpp pin can be left unconnected.
SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature pre-
vents programming of data in the designated sectors once the feature has been enabled.
These sectors can contain secure code that is used to bring up the system. Enabling the lock-
down feature will allow the boot code to stay in the device while data in the rest of the device is
updated. This feature does not have to be activated; any sectors usage as a write protected
region is optional to the user.
At power-up or reset all sectors are unlocked. To activate the lockdown for a specific sector,
the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked
down, the contents of the sector is read-only and cannot be erased or programmed.
SECTOR LOCKDOWN DETECTION: A software method is available to determine if program-
ming of a sector is locked down. When the device is in the software product identification
mode (see Software Product Identification Entry and Exit sections) a read from address loca-
tion 00002H within a sector will show if programming the sector is locked down. If the data on
I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown
feature has been enabled and the sector cannot be programmed. The software product identi-
fication exit code should be used to return to standard operation.
SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is
through reset or power-up cycles. After power-up or reset, the content of a sector that is
locked down can be erased and reprogrammed.
ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to
interrupt a sector erase operation and then program or read data from a different sector within
the same plane. Since this device has a dual-plane architecture, there is no need to use the
Erase Suspend feature while erasing a sector when you want to read data from a sector in the
other plane. After the Erase Suspend command is given, the device requires a maximum time
of 15 µs to suspend the erase operation. After the erase operation has been suspended, the
plane that contains the suspended sector enters the erase-suspend-read mode. The system
can then read data or program data to any other sector within the device. An address is not
required during the Erase Suspend command. During a sector erase suspend, another sector
cannot be erased. To resume the sector erase operation, the system must write the Erase
Resume command. The Erase Resume command is a one-bus cycle command, which does
require the plane address (determined by A18 and A19). The device also supports an erase
suspend during a complete chip erase. While the chip erase is suspended, the user can read
from any sector within the memory that is protected. The command sequence for a chip erase
suspend and a sector erase suspend are the same.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and man-
ufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product.
For details, see Operating Modeson page 13 (for hardware operation) or Software Product
Identification Entry/Exiton page 21. The manufacturer and device codes are the same for
both modes.
7

7페이지


구       성 총 30 페이지수
다운로드[ AT52BR1674T.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AT52BR1674

16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory

ATMEL Corporation
ATMEL Corporation
AT52BR1674T

16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory

ATMEL Corporation
ATMEL Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵