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AT60142E-DC20SSB 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT60142E-DC20SSB은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 AT60142E-DC20SSB 기능
기능 Rad Hard 512K x 8 Very Low Power CMOS SRAM
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AT60142E-DC20SSB 데이터시트, 핀배열, 회로
Features
Operating Voltage: 3.3V
Access Time:
– 15 ns (Preview) for 3.3V biased only (AT60142E)
– 17 ns and 20 ns for 5V Tolerant (AT60142ET)
Very Low Power Consumption
– Active: 810 mW (Max) @ 15 ns
– Standby: 215 µW (Typ)
Wide Temperature Range: -55 to +125°C
500 Mils Width Package
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 Micron Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 4000V
Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8
bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an
extremely low standby supply current (Typical value = 65 µA) with a fast access time
at 15 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns
specification.
The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20
ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of
the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Note: 1. Preliminary: contact factory for availability.
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
AT60142E
AT60142ET
Rev. 4156F–AERO–06/04
1




AT60142E-DC20SSB pdf, 반도체, 판매, 대치품
Decoupling
AT60142E/ET
Decoupling capacitors closed to the device
AT60142
Vcc
Recommended
value:
100 nF
9 Vcc
10 GND
Vcc
GND 28
Vcc 27
Recommended
value:
100 nF
VRef
Mandatory Capacitor
19
Recommended
value:
10 µF
4156F–AERO–06/04
4

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AT60142E-DC20SSB 전자부품, 판매, 대치품
AC Characteristics
Temperature Range:................................................ -55 +125°C
Supply Voltage:........................................................ 3.3 +0.3V
Input Pulse Levels: .................................................. GND to 3.0V
Input Rise and Fall Times:....................................... 3ns (10 - 90%)
Input and Output Timing Reference Levels: ............ 1.5V
VRef Capacitor: ....................................................... 10 µF
Output Loading IOL/IOH:............................................ See Figure 1
Figure 1. AC Test Loads Waveforms
Data Retention Mode
Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage
and supply current are guaranteed over temperature. The following rules insure data
retention:
1. During data retention chip select CS must be held high within VCC to VCC -0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high imped-
ance, minimizing power dissipation.
3. During power-up and power-down transitions CS and OE must be kept between
VCC + 0.3V and 70% of VCC.
4. The RAM can begin operation > tR ns after VCC reaches the minimum operation
voltages (3V).
Figure 2. Data Retention Timing
7 AT60142E/ET
4156F–AERO–06/04

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관련 데이터시트

부품번호상세설명 및 기능제조사
AT60142E-DC20SSB

Rad Hard 512K x 8 Very Low Power CMOS SRAM

ATMEL Corporation
ATMEL Corporation

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