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PDF AT60142ET-DC20M-E Data sheet ( Hoja de datos )
| Número de pieza | AT60142ET-DC20M-E | |
| Descripción | Rad Hard 512K x 8 Very Low Power CMOS SRAM | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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Features
• Operating Voltage: 3.3V
• Access Time:
– 15 ns (Preview) for 3.3V biased only (AT60142E)
– 17 ns and 20 ns for 5V Tolerant (AT60142ET)
• Very Low Power Consumption
– Active: 810 mW (Max) @ 15 ns
– Standby: 215 µW (Typ)
• Wide Temperature Range: -55 to +125°C
• 500 Mils Width Package
• TTL-Compatible Inputs and Outputs
• Asynchronous
• Designed on 0.25 Micron Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
• ESD Better than 4000V
Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8
bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an
extremely low standby supply current (Typical value = 65 µA) with a fast access time
at 15 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns
specification.
The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20
ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of
the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Note: 1. Preliminary: contact factory for availability.
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
AT60142E
AT60142ET
Rev. 4156F–AERO–06/04
1
1 page  
Electrical Characteristics
Absolute Maximum Ratings*
Supply Voltage to GND Potential: ......................... -0.5V + 4.6V
DC Input Voltage:.....................................GND -0.5V to 4.6V(1)
DC Output Voltage High Z State: ................ GND -0.5V to 4.6V
Storage Temperature: ................................... -65°C to + 150°C
Output Current Into Outputs (Low): ............................... 20 mA
Electro Statics Discharge Voltage: .... > 4001V (MIL STD 883D
Method 3015.3)
Note: 1. 7V for ET version.
Military Operating Range
Military
Recommended DC Operating Conditions
Parameter
Description
Min
Vcc Supply voltage
3
GND
Ground
0.0
VIL
Input low voltage
GND - 0.3
VIH Input high voltage
2.2
Note: 1. 5.8V for ET version
Capacitance
Parameter
Cin(1)
Cout(1)
Description
Input low voltage
Output high voltage
Note: 1. Guaranteed but not tested.
Min
–
–
*NOTE:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Operating Voltage
3.3 + 0.3V
Operating Temperature
-55°C to + 125°C
Typ Max Unit
3.3 3.6
V
0.0 0.0
V
0.0 0.8
V
– VCC + 0.3(1) V
Typ Max Unit
– 8 pF
– 8 pF
5 AT60142E/ET
4156F–AERO–06/04
5 Page 
Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = VIL, WE = VIH)
Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH)
11 AT60142E/ET
4156F–AERO–06/04
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet AT60142ET-DC20M-E.PDF ] | |
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