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AT636 데이터시트 PDF




Power Semiconductors에서 제조한 전자 부품 AT636은 전자 산업 및 응용 분야에서
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기능 PHASE CONTROL THYRISTOR
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AT636 데이터시트, 핀배열, 회로
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 03
AT636
Repetitive voltage up to
Mean on-state current
Surge current
1800 V
1965 A
36 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
125 1800
V
V RSM
Non-repetitive peak reverse voltage
125 1900
V
V DRM
Repetitive peak off-state voltage
125 1800
V
I RRM
Repetitive peak reverse current
V=VRRM
125 70
mA
I DRM
Repetitive peak off-state current
V=VDRM
125 70
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1965
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1695
A
I TSM
Surge on-state current
sine wave, 10 ms
125 36
kA
I² t I² t
without reverse voltage
6480 x1E3 A²s
V T On-state voltage
On-state current = 2900 A
25 1.4
V
V T(TO)
Threshold voltage
125 0.82
V
r T On-state slope resistance
125 0.180
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 2200 A, gate 10V 5ohm 125 200 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
125 500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
250 µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 1430 A
125 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=5V, tp=30µs
25 700
mA
GATE
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT Gate trigger current
VD=5V
25 300
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
21 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 125
22.0 / 24.5
520
°C
kN
g
ORDERING INFORMATION : AT636 S 18
standard specification
VDRM&VRRM/100




AT636 pdf, 반도체, 판매, 대치품
AT636 PHASE CONTROL THYRISTOR
ANSALDO
FINAL SPECIFICATION feb 97 - ISSUE : 03
6000
ON-STATE CHARACTERISTIC
Tj = 125 °C
5000
4000
3000
2000
1000
0
0.6
1.1 1.6
On-state Voltage [V]
40
35
30
25
20
15
10
5
0
1
SURGE CHARACTERISTIC
Tj = 125 °C
10
n° cycles
100
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1 1
t[s]
10 100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by

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