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PDF AT671S45 Data sheet ( Hoja de datos )
| Número de pieza | AT671S45 | |
| Descripción | PHASE CONTROL THYRISTOR | |
| Fabricantes | Power Semiconductors | |
| Logotipo |  |
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ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 02
AT671
Repetitive voltage up to
Mean on-state current
Surge current
4500 V
1085 A
13 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
125 4500
V
V RSM
Non-repetitive peak reverse voltage
125 4600
V
V DRM
Repetitive peak off-state voltage
125 4500
V
I RRM
Repetitive peak reverse current
V=VRRM
125 100
mA
I DRM
Repetitive peak off-state current
V=VDRM
125 100
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1085
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
945 A
I TSM
Surge on-state current
sine wave, 10 ms
125 13
kA
I² t I² t
without reverse voltage
845 x1E3 A²s
V T On-state voltage
On-state current = 2000 A
25 V
V T(TO)
Threshold voltage
125 1.2
V
r T On-state slope resistance
125 0.700
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1200 A, gate 10V 5ohm 125 400 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 75% of VDRM
125 1000
V/µs
td
Gate controlled delay time, typical
VD=200V, gate source 20V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 80% VDRM
350 µs
Q rr Reverse recovery charge
di/dt=-60 A/µs, I= 1000 A
125 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 mA
I L Latching current, typical
VD=12V, tp=30µs
25 mA
GATE
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT Gate trigger current
VD=5V
25 400
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
125 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
21 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 125
22.0 / 24.5
520
°C
kN
g
ORDERING INFORMATION : AT671 S 45
standard specification
VDRM&VRRM/100
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AT671S45.PDF ] | |
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