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Número de pieza | AT681 | |
Descripción | PHASE CONTROL THYRISTOR | |
Fabricantes | Power Semiconductors | |
Logotipo | ||
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PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 02
AT681
Repetitive voltage up to
Mean on-state current
Surge current
6000 V
840 A
10 kA
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current = 1570 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current
From 75% VDRM up to 1200 A
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 75% of VDRM
td Gate controlled delay time, typical VD=200V, gate source 20V, 10 ohm
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 80% VDRM
Q rr Reverse recovery charge
di/dt=-60 A/µs, I= 1000 A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
I L Latching current, typical
GATE
V GT
Gate trigger voltage
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
0.5 VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT681 S 60
standard specification
VDRM&VRRM/100
Tj
[°C] Value Unit
120 6000
120 6100
120 6000
120 150
120 150
V
V
V
mA
mA
840 A
705 A
120 10
kA
500 x1E3 A²s
25 2.4
V
120 1.3
V
120 1.150
mohm
120 100
120 500
25 5
650
120
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 400
120 0.5
30
10
5
150
2
V
mA
V
V
A
V
W
W
21
6
120
22.0 / 24.5
520
°C/kW
°C/kW
°C
kN
g
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AT681.PDF ] |
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