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AT704S16 데이터시트 PDF




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기능 PHASE CONTROL THYRISTOR
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AT704S16 데이터시트, 핀배열, 회로
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
Feb 97 - ISSUE : 04
AT704
Repetitive voltage up to
Mean on-state current
Surge current
1600 V
640 A
8 kA
Symbol Characteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current = 1000 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 720 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 470 A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
VD=5V, gate open circuit
I L Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT704 S 16
standard specification
VDRM&VRRM/100
Tj
[°C] Value Unit
125 1600
125 1700
125 1600
125 50
125 50
V
V
V
mA
mA
640 A
515 A
125 8
kA
320 x1E3 A²s
25 1.58
V
125 0.86
V
125 0.790
mohm
125 200
125 500
25 1.3
250
125
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 200
125 0.25
30
10
5
150
2
V
mA
V
V
A
V
W
W
52
10
-30 / 125
8.4 / 9.4
280
°C/kW
°C/kW
°C
kN
g




AT704S16 pdf, 반도체, 판매, 대치품
AT704 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION Feb 97 - ISSUE : 04
ON-STATE CHARACTERISTIC
Tj = 125 °C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0.6
1.1 1.6 2.1
On-state Voltage [V]
2.6
8
7
6
5
4
3
2
1
0
1
ANSALDO
SURGE CHARACTERISTIC
Tj = 125 °C
10
n° cycles
100
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0.001
0.01
0.1 1
t[s]
10 100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by

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