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AT875LTS44 데이터시트 PDF




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기능 PHASE CONTROL THYRISTOR
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AT875LTS44 데이터시트, 핀배열, 회로
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
apr 97 - ISSUE : 01
AT875LT
Repetitive voltage up to
Mean on-state current
Surge current
4400 V
2200 A
25.2 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
120 4400
V
V RSM
Non-repetitive peak reverse voltage
120 4500
V
V DRM
Repetitive peak off-state voltage
120 4400
V
I RRM
Repetitive peak reverse current
V=VRRM
120 200
mA
I DRM
Repetitive peak off-state current
V=VDRM
120 200
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
2200
A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1720
A
I TSM
Surge on-state current
sine wave, 10 ms
120 25.2
kA
I² t I² t
without reverse voltage
3175 x1E3 A²s
V T On-state voltage
On-state current = 2000 A
25 2
V
V T(TO)
Threshold voltage
120 1.3
V
r T On-state slope resistance
120 0.334
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1600 A, gate 10V 5ohm 120 200 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
120 1000
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 40V, 10 ohm , tr=.5 µs 25
3
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
400 µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 1050 A
120 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=12V, tp=30µs
25 1000
mA
GATE
V GT
Gate trigger voltage
VD=12V
25 3.5
V
I GT Gate trigger current
VD=12V
25 400
mA
V GD
Non-trigger gate voltage, min.
VD=2000 V
120 0.8
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
10 V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
9.5 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 120
40.0 / 50.0
1150
°C
kN
g
ORDERING INFORMATION : AT875LT S 44
standard specification
VDRM&VRRM/100




AT875LTS44 pdf, 반도체, 판매, 대치품
AT875LT PHASE CONTROL THYRISTOR
FINAL SPECIFICATION apr 97 - ISSUE : 01
ON-STATE CHARACTERISTIC
Tj = 120 °C
ANSALDO
SURGE CHARACTERISTIC
Tj = 120 °C
7000
6000
5000
4000
3000
2000
1000
0
0.6 1.1 1.6 2.1 2.6 3.1 3.6
On-state Voltage [V]
30
25
20
15
10
5
0
1
10
n° cycles
100
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.001
0.01
0.1 1
t[s]
10 100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by

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