AT302S08 Datasheet PDF - Power Semiconductors
| Part Number | AT302S08 | |
| Description | PHASE CONTROL THYRISTOR | |
| Manufacturers | Power Semiconductors | |
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There is a preview and AT302S08 download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
FINAL SPECIFICATION
feb 97 - ISSUE : 02
AT302
Repetitive voltage up to
Mean on-state current
Surge current
800 V
995 A
12 kA
Symbol Characteristic
BLOCKING
Conditions
Tj
[°C] Value Unit
V RRM
Repetitive peak reverse voltage
150 800
V
V RSM
Non-repetitive peak reverse voltage
150 900
V
V DRM
Repetitive peak off-state voltage
150 800
V
I RRM
Repetitive peak reverse current
V=VRRM
150 50
mA
I DRM
Repetitive peak off-state current
V=VDRM
150 50
mA
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
995 A
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
980 A
I TSM
Surge on-state current
sine wave, 10 ms
150 11.5
kA
I² t I² t
without reverse voltage
661 x1E3 A²s
V T On-state voltage
On-state current = 1000 A
25 1.25
V
V T(TO)
Threshold voltage
150 0.8
V
r T On-state slope resistance
150 0.450
mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1200 A, gate 10V 5ohm 150 200 A/µs
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
150 500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=.5 µs 25 1.5
µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
µs
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 1000 A
150 µC
I rr Peak reverse recovery current
VR= 50 V
A
I H Holding current, typical
VD=5V, gate open circuit
25 300
mA
I L Latching current, typical
VD=5V, tp=30µs
25 700
mA
GATE
V GT
Gate trigger voltage
VD=5V
25 3.5
V
I GT Gate trigger current
VD=5V
25 200
mA
V GD
Non-trigger gate voltage, min.
VD=VDRM
150 0.25
V
V FGM
Peak gate voltage (forward)
30 V
I FGM
Peak gate current
10 A
V RGM
Peak gate voltage (reverse)
5V
P GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P G Average gate power dissipation
2W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
50 °C/kW
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
15 °C/kW
T j Operating junction temperature
F Mounting force
Mass
-30 / 150
8.0 / 9.0
85
°C
kN
g
ORDERING INFORMATION : AT302 S 08
standard specification
VDRM&VRRM/100
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AT302S08 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AT302S08.PDF Datasheet ] | |
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