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AT41533 데이터시트 PDF




Agilent(Hewlett-Packard)에서 제조한 전자 부품 AT41533은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AT41533 기능
기능 General Purpose/ Low Noise NPN Silicon Bipolar Transistor
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AT41533 데이터시트, 핀배열, 회로
General Purpose, Low Noise
NPN␣ Silicon Bipolar Transistor
Technical Data
AT-41511
AT-41533
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available[1]
Outline Drawing
EMITTER COLLECTOR
415
BASE EMITTER
SOT 143 (AT-41511)
COLLECTOR
415
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3␣ lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50␣ ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz fT Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
BASE EMITTER
SOT 23 (AT-41533)
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
5965-8929E
4-134




AT41533 pdf, 반도체, 판매, 대치품
AT-41511 Typical Scattering Parameters, Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 5 mA
Freq.
GHz
S11
Mag Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
S22
Mag Ang
0.1 0.84 -27 23.44 14.854 161 -34.89 0.018 76 0.95 -11
0.5 0.59
-102 19.01
8.924 115 -24.88 0.057
48
0.65
-34
0.9 0.49
-141 15.09
5.684 93 -22.97 0.071 43
0.51
-39
1.0 0.48
-149 14.30
5.189 89 -22.73 0.073 43
0.49
-39
1.5 0.46 -176 11.15 3.61 72 -21.21 0.087 44 0.44 -43
1.8 0.46 170 9.69 3.051 64 -20.26 0.097 45 0.43 -45
2.0 0.46 162 8.86 2.774 59 -19.74 0.103 45 0.42 -47
2.4 0.47 148 7.37 2.337 50 -18.64 0.117 46 0.42 -51
3.0 0.5 130 5.58 1.901 36 -17.14 0.139 45 0.41 -59
4.0 0.56 106 3.25
1.454 17 -14.89 0.18
42
0.4
-73
5.0 0.61 87 1.36 1.17 0 -12.96 0.225 37 0.4 -91
30
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 5 mA
MSG
25
20
Freq
GHz
0.1
0.9
1.8
2.4
Fmin
dB
Γopt
Mag
Ang
Rn
-
0.8 0.45
1.0 0.39
1.4 0.32
1.7 0.40
6 0.25
63 0.19
137 0.12
177 0.09
15
MAG
10
S21
5
MSG
0
0 1 23 45
FREQUENCY (GHz)
Figure 10. AT-41511 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.
AT-41533 Typical Scattering Parameters, Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 5 mA
Freq.
GHz
S11
Mag Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
S22
Mag Ang
0.1 0.78
-30 23.43 14.834 155 -33.98 0.020 75
0.5 0.35
-99 16.91
7.004 103 -24.58 0.059
60
0.9 0.23
-144 12.50
4.219 84 -21.21 0.087 62
1.0 0.21
-154 11.65
3.826 80 -20.54 0.094 63
1.5 0.20 162 8.50
2.661 64 -17.46 0.134 64
1.8 0.22 144 7.09
2.261 56 -15.97 0.159 63
2.0 0.23 134 6.30
2.065 51 -15.09 0.176 63
2.4 0.26 118 4.97
1.773 42 -13.39 0.214 61
3.0 0.30 101 3.45
1.488 30 -11.21 0.275 56
4.0 0.37 80 1.66 1.211 13 -8.20 0.389 46
5.0 0.44
62
0.35
1.041
-1
-5.90 0.507
33
0.94 -12
0.62 -28
0.55 -30
0.54 -31
0.52 -36
0.51 -40
0.51 -42
0.50 -48
0.48 -58
0.45 -80
0.42 -104
30
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 5 mA
Freq
Fmin
Γopt
GHz
dB Mag Ang
0.1
0.7 0.45
8
0.9
1.0 0.25
94
1.8 1.4 0.38 -159
2.4 1.6 0.54 -122
Rn
-
0.20
0.13
0.08
0.16
4-137
25 MSG
20
15
MAG
10
S21
5
MSG
0
0 1 23 45
FREQUENCY (GHz)
Figure 11. AT-41533 Gains vs.
Frequency at VCE = 2.7 V, IC = 5 mA.

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AT41533 전자부품, 판매, 대치품
AT-41511 Typical Scattering Parameters, Common Emitter, Zo = 50 , VCE = 5 V, IC = 25 mA
Freq.
GHz
S11
Mag Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
S22
Mag Ang
0.1 0.51
-74
30
32.792 140
-39
0.011
65
0.80
-19
0.5 0.46 -161
20
10.259 95
-31 0.028 62
0.51 -21
0.9 0.47
177
15
5.830
80
-27 0.043 66
0.48
-23
1.0 0.47
173
14
5.257
78
-27 0.047 67
0.48
-24
1.5 0.48
157
11
3.553
65
-23 0.068 68
0.47
-30
1.8 0.49
148
9
2.983
58
-22 0.081 68
0.48
-34
2.0 0.49
142
9
2.692
54
-21 0.090 67
0.48
-36
2.4 0.51
132
7
2.254
46
-19 0.108 65
0.48
-42
3.0 0.54
118
5
1.825
34
-17 0.135 61
0.47
-51
4.0 0.59
97
3
1.386
16
-15 0.183 54
0.46
-66
5.0 0.63
81
1
1.113
0
-13 0.234 47
0.46 -84
30
MSG
AT-41511 Typical Noise Parameters,
Common Emitter, Zo = 50 , VCE = 5 V, IC = 25 mA
Freq
Fmin
Γopt
GHz
dB Mag Ang
0.1
1.6 0.08
14
0.9
1.9 0.11
165
1.8 2.3 0.28 -153
2.4 2.7 0.39 -134
Rn
-
0.18
0.16
0.18
0.22
25
20
MAG
15
10
S21
5
MSG
0
01 2 3 45
FREQUENCY (GHz)
Figure 16. AT-41511 Gains vs.
Frequency at VCE = 5 V, IC = 25 mA.
AT-41533 Typical Scattering Parameters, Common Emitter, Zo = 50 , VCE = 5 V, IC = 25 mA
Freq.
GHz
S11
Mag Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
S22
Mag Ang
0.1 0.37
-62 30.00 31.606 129 -37.72 0.013 73
0.74
0.5 0.13
-153 18.46
8.375 89 -26.20 0.049 76
0.51
0.9 0.13
163 13.56
4.764 76 -21.31 0.086 75
0.49
1.0 0.13
154 12.68
4.305 73 -20.45 0.095 74
0.49
1.5 0.17 128 9.38
2.945 61 -16.95 0.142 71
0.48
1.8 0.19 117 7.93
2.493 54 -15.39 0.170 68
0.48
2.0 0.20 111 7.14
2.274 50 -14.47 0.189 66
0.48
2.4 0.23 102 5.80
1.949 42 -12.84 0.228 62
0.47
3.0 0.27 90 4.25 1.632 31 -10.84 0.287 56 0.45
4.0 0.33 76 2.48 1.331 14 -8.13 0.392 45 0.42
5.0 0.39
60
1.19
1.147
-1
-6.09 0.496
32
0.38
30
MSG
-19
-19
-23
-25
-31
-35
-38
-44
-54
-74
-97
AT-41533 Typical Noise Parameters,
Common Emitter, Zo = 50 , VCE = 5 V, IC = 25 mA
Freq
Fmin
Γopt
GHz
dB Mag Ang
0.1
1.3 0.08
13
0.9 1.6 0.19 -170
1.8 1.9 0.42 -126
2.4 2.1 0.55 -105
Rn
-
0.12
0.10
0.16
0.32
4-140
25
20
15 MAG
10
S21
5
MSG
0
01 2 3 45
FREQUENCY (GHz)
Figure 17. AT-41533 Gains vs.
Frequency at VCE = 5 V, IC = 25 mA.

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관련 데이터시트

부품번호상세설명 및 기능제조사
AT41533

General Purpose/ Low Noise NPN Silicon Bipolar Transistor

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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