Datasheet.kr   

AT45 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT45은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AT45 자료 제공

부품번호 AT45 기능
기능 1-Megabit 5.0-volt Only Serial DataFlash
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


AT45 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 20 페이지수

미리보기를 사용할 수 없습니다

AT45 데이터시트, 핀배열, 회로
Features
Single 4.5V - 5.5V Supply
Serial Interface Architecture
Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Pages (264 Bytes/Page) Main Memory
Optional Page and Block Erase Operations
One 264-Byte SRAM Data Buffer
Internal Program and Control Timer
Fast Page Program Time – 7 ms Typical
120 µs Typical Page to Buffer Transfer Time
Low-Power Dissipation
– 15 mA Active Read Current Typical
– 10 µA CMOS Standby Current Typical
15 MHz Max Clock Frequency
Hardware Data Protection Feature
Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT45D011 is a 5.0-volt only, serial interface Flash memory suitable for in-system
reprogramming. Its 1,081,344 bits of memory are organized as 512 pages of 264
bytes each. In addition to the main memory, the AT45D011 also contains one SRAM
data buffer of 264 bytes. Unlike conventional Flash memories that are accessed ran-
domly with multiple address lines and a parallel interface, the DataFlash uses a serial
interface to sequentially access its data. The simple serial interface facilitates hard-
(continued)
Pin Configurations
SOIC
Pin Name
CS
SCK
SI
Function
Chip Select
Serial Clock
Serial Input
SI
SCK
RESET
CS
1
2
3
4
8 SO
7 GND
6 VCC
5 WP
SO Serial Output
WP
Hardware Page
Write Protect Pin
RESET
Chip Reset
RDY/BUSY Ready/Busy
PLCC
TSSOP Top View
Type 1
SCK
SI
SO
NC
NC
NC
NC
NC
NC
5
6
7
8
9
10
11
12
13
29 WP
28 RESET
27 RDY/BUSY
26 NC
25 NC
24 NC
23 NC
22 NC
21 NC
RDY/BUSY
RESET
WP
VCC
GND
SCK
SO
1
2
3
4
5
6
7
14 CS
13 NC
12 NC
11 NC
10 NC
9 NC
8 SI
1-Megabit
5.0-volt Only
Serial
DataFlash®
AT45D011
Preliminary
AT45DB011
Preliminary 16-
Megabit 2.7-volt
Only Serial
DataFlash
Note: PLCC package pins 16
and 17 are DON’T CONNECT
Rev. 1123A–08/98
1




AT45 pdf, 반도체, 판매, 대치품
main memory that is to be transferred, and nine don’t care
bits. The CS pin must be low while toggling the SCK pin to
load the opcode, the address bits, and the don’t care bits
from the SI pin. The transfer of the page of data from the
main memory to the buffer will begin when the CS pin tran-
sitions from a low to a high state. During the transfer of a
page of data (tXFR), the status register can be read to deter-
mine whether the transfer has been completed or not.
MAIN MEMORY PAGE TO BUFFER COMPARE: A page of
data in main memory can be compared to the data in the
buffer. An 8-bit opcode of 60H is followed by 24 address
bits consisting of the six reserved bits, nine address bits
(PA8-PA0) which specify the page in the main memory that
is to be compared to the buffer, and nine don’t care bits.
The loading of the opcode and the address bits is the same
as described previously. The CS pin must be low while tog-
gling the SCK pin to load the opcode, the address bits, and
the don't care bits from the SI pin. On the low to high transi-
tion of the CS pin, the 264 bytes in the selected main mem-
ory page will be compared with the 264 bytes in the buffer.
During this time (tXFR), the status register will indicate that
the part is busy. On completion of the compare operation,
bit 6 of the status register is updated with the result of the
compare.
Program
BUFFER WRITE: Data can be shifted in from the SI pin
into the data buffer. To load data into the buffer, an 8-bit
opcode of 84H is followed by 15 don’t care bits and nine
address bits (BFA8-BFA0). The nine address bits specify
the first byte in the buffer to be written. The data is entered
following the address bits. If the end of the data buffer is
reached, the device will wrap around back to the beginning
of the buffer. Data will continue to be loaded into the buffer
until a low to high transition is detected on the CS pin.
BUFFER TO MAIN MEMORY PAGE PROGRAM WITH
BUILT-IN ERASE: Data written into the buffer can be pro-
grammed into the main memory. An 8-bit opcode of 83H is
followed by the six reserved bits, nine address bits (PA8-
PA0) that specify the page in the main memory to be writ-
ten, and nine additional don’t care bits. When a low to high
transition occurs on the CS pin, the part will first erase the
selected page in main memory to all 1s and then program
the data stored in the buffer into the specified page in the
main memory. Both the erase and the programming of the
page are internally self timed and should take place in a
maximum time of tEP. During this time, the status register
will indicate that the part is busy.
BUFFER TO MAIN MEMORY PAGE PROGRAM WITH-
OUT BUILT-IN ERASE: A previously erased page within
main memory can be programmed with the contents of the
buffer. An 8-bit opcode of 88H is followed by the six
reserved bits, nine address bits (PA8-PA0) that specify the
page in the main memory to be written, and nine additional
don’t care bits. When a low to high transition occurs on the
CS pin, the part will program the data stored in the buffer
into the specified page in the main memory. It is necessary
that the page in main memory that is being programmed
has been previously erased. The programming of the page
is internally self timed and should take place in a maximum
time of tP. During this time, the status register will indicate
that the part is busy.
PAGE ERASE: The optional Page Erase command can be
used to individually erase any page in the main memory
array allowing the Buffer to Main Memory Page Program
without Built-In Erase command to be utilized at a later
time. To perform a Page Erase, an opcode of 81H must be
loaded into the device, followed by six reserved bits, nine
address bits (PA8-PA0), and nine don’t care bits. The nine
address bits are used to specify which page of the memory
array is to be erased. When a low to high transition occurs
on the CS pin, the part will erase the selected page to 1s.
The erase operation is internally self-timed and should take
place in a maximum time of tPE. During this time, the status
register will indicate that the part is busy.
BLOCK ERASE: A block of eight pages can be erased at
one time allowing the Buffer to Main Memory Page Pro-
gram without Built-In Erase command to be utilized to
reduce programming times when writing large amounts of
data to the device. To perform a Block Erase, an opcode of
50H must be loaded into the device, followed by six
reserved bits, six address bits (PA8-PA3), and 12 don’t
care bits. The six address bits are used to specify which
block of eight pages is to be erased. When a low to high
transition occurs on the CS pin, the part will erase the
selected block of eight pages to 1s. The erase operation is
internally self-timed and should take place in a maximum
time of tBE. During this time, the status register will indicate
that the part is busy.
4 AT45DB011

4페이지










AT45 전자부품, 판매, 대치품
AT45DB011
DC and AC Operating Range
AT45D011
Operating Temperature (Case)
Com.
Ind.
0°C to 70°C
-40°C to 85°C
VCC Power Supply(1)
4.5V to 5.5V
Note: 1. After power is applied and VCC is at the minimum specified data sheet value, the system should wait 20 ms before an oper-
ational mode is started.
DC Characteristics
Symbol
ISB
ICC1
ICC2
ILI
ILO
VIL
VIH
VOL
VOH1
VOH2
Parameter
Standby Current
Active Current,
Read Operation
Active Current,
Program/Erase Operation
Input Load Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Condition
CS, RESET, WP = VIH,
all inputs at CMOS levels
f = 15 MHz; IOUT = 0 mA;
VCC = 5.5V
VCC = 5.5V
VIN = CMOS levels
VI/O = CMOS levels
IOL = 2.1 mA
IOH = -400 µA
IOH = -100 µA; VCC = 4.5V
Min Typ Max Units
10 20 µA
15 25 mA
25 50 mA
10 µA
10 µA
0.8 V
2.0 V
0.45 V
2.4 V
4.2 V
7

7페이지


구       성 총 20 페이지수
다운로드[ AT45.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AT4

Acorn Triode

Mullard
Mullard
AT403

PHASE CONTROL THYRISTOR

Power Semiconductors
Power Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵