Datasheet.kr   

AT49BV001AN 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT49BV001AN은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 AT49BV001AN 자료 제공

부품번호 AT49BV001AN 기능
기능 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


AT49BV001AN 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 18 페이지수

미리보기를 사용할 수 없습니다

AT49BV001AN 데이터시트, 핀배열, 회로
Features
Single Supply for Read and Write: 2.7 to 3.6V
Fast Read Access Time – 55 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (32K Bytes, 64K Bytes)
Fast Erase Cycle Time – 3 Seconds
Byte-by-Byte Programming – 30 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
55 ns with power dissipation of just 54 mW over the industrial temperature range.
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
RESET
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
No Connect
PLCC Top View
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
*RESET
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV001A
AT49BV001AN
AT49BV001AT
AT49BV001ANT
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
Note: *This pin is a NC on the AT49BV001AN(T).
Rev. 3364C–FLASH–9/03
1




AT49BV001AN pdf, 반도체, 판매, 대치품
BYTE PROGRAMMING: Once the memory array is erased, the device is programmed (to a
logical “0”) on a byte-by-byte basis. Please note that a data “0” cannot be programmed back to
a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle operation (please refer to the Command
Definitions table). The device will automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs
last, and the data latched on the rising edge of WE or CE, whichever occurs first. Program-
ming is completed after the specified tBP cycle time. The DATA polling feature may also be
used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has
a programming lockout feature. This feature prevents programming of data in the designated
block once the feature has been enabled. The size of the block is 16K bytes. This block,
referred to as the boot block, can contain secure code that is used to bring up the system.
Enabling the lockout feature will allow the boot code to stay in the device while data in the rest
of the device is updated. This feature does not have to be activated; the boot block’s usage as
a write protected region is optional to the user. The address range of the boot block is 00000
to 03FFF for the AT49BV001A(N) while the address range of the boot block is 1C000 to
1FFFF for the AT49BV001A(N)T.
Once the feature is enabled, the data in the boot block can no longer be erased or pro-
grammed with input voltage of 5.5V or less. Data in the main memory block can still be
changed through the regular programming method. To activate the lockout feature, a series of
six program commands to specific addresses with specific data must be performed. Please
refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if pro-
gramming of the boot block section is locked out. When the device is in the software product
identification mode (see Software Product Identification Entry and Exit sections) a read from
address location 00002H will show if programming the boot block is locked out for the
AT49BV001A(N), and a read from address location 1C002H will show if programming the boot
block is locked out for the AT49BV001A(N)T. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lockout feature has been activated and
the block cannot be programmed. The software product identification code should be used to
return to standard operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE: The user can override the boot
block programming lockout by taking the RESET pin to 12 volts during the entire chip erase,
sector erase or byte programming operation. When the RESET pin is brought back to TTL lev-
els the boot block programming lockout feature is again active. This feature is not available on
the AT49BV001AN(T).
PRODUCT IDENTIFICATION: The product identification mode identifies the device and man-
ufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
4 AT49BV001A(N)(T)
3364C–FLASH–9/03

4페이지










AT49BV001AN 전자부품, 판매, 대치품
AT49BV001A(N)(T)
DC and AC Operating Range
Operating Temperature (Case)
VCC Power Supply
Ind.
AT49BV001A(N)(T)-55
-40°C - 85°C
2.7V - 3.6V
Operating Modes
Mode
CE OE WE RESET(6)
Ai
Read
Program/Erase(2)
Standby/Write Inhibit
Program Inhibit
Program Inhibit
Output Disable
Reset
Product Identification
VIL VIL VIH
VIL VIH VIL
VIH X(1) X
X X VIH
X VIL X
X VIH X
XXX
VIH
VIH
VIH
VIH
VIH
VIH
VIL
Ai
Ai
X
X
Hardware
VIL VIL VIH
A1 - A16 = VIL, A9 = VH,(3), A0 = VIL
A1 - A16 = VIL, A9 = VH,(3), A0 = VIH
Software(5)
A0 = VIL, A1 - A16=VIL
Notes:
A0 = VIH, A1 - A16=VIL
1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 05H – AT49BV001A(N), 04H – AT49BV001A(N)T.
5. See details under Software Product Identification Entry/Exit.
6. This pin is not available on the AT49BV001AN(T).
I/O
DOUT
DIN
High Z
High Z
High Z
Manufacturer Code(4)
Device Code(4)
Manufacturer Code(4)
Device Code(4)
DC Characteristics
Symbol Parameter
Condition
ILI
ILO
ISB1
ISB2
ICC(1)
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA
Input High Voltage
Output Low Voltage
IOL = 2.1 mA
Output High Voltage
IOH = -400 µA
1. In the erase mode, ICC is 50 mA.
Min Max Units
10 µA
10 µA
50 µA
1 mA
15 mA
0.6 V
2.0 V
0.45 V
2.4 V
3364C–FLASH–9/03
7

7페이지


구       성 총 18 페이지수
다운로드[ AT49BV001AN.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AT49BV001A

1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

ATMEL Corporation
ATMEL Corporation
AT49BV001A-55JI

1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

ATMEL Corporation
ATMEL Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵