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PDF AT49BV040A-70TI Data sheet ( Hoja de datos )
| Número de pieza | AT49BV040A-70TI | |
| Descripción | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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Features
• Single Supply for Read and Write: 2.7 to 3.6V
• Fast Read Access Time – 70 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)
• Fast Erase Cycle Time – 7 Seconds
• Byte-by-Byte Programming – 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV040A is a 2.7-volt-only in-system reprogrammable Flash Memory. Its
4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
70 ns with power dissipation of just 54 mW over the commercial temperature range.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage™
Flash Memory
AT49BV040A
Rev. 3358A–FLASH–6/03
1
1 page  
AT49BV040A
Command Definition (in Hex)(1)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
Addr Data
2nd Bus
Cycle
Addr Data
3rd Bus
Cycle
Addr Data
4th Bus
Cycle
Addr Data
5th Bus
Cycle
Addr Data
6th Bus
Cycle
Addr Data
Read
Chip Erase
Sector Erase
1 Addr DOUT
6 555 AA AAA(2) 55 555 80 555 AA AAA 55 555 10
6 555 AA AAA 55 555 80 555 AA AAA 55 SA(5) 30
Byte Program
Boot Block Lockout(3)
4
6
555 AA AAA 55 555 A0 Addr DIN
555 AA AAA 55 555 80 555 AA AAA 55 555 40
Product ID Entry
3 555 AA AAA 55 555 90
Product ID Exit(4)
3 555 AA AAA 55 555 F0
Product ID Exit(4)
1 XXX F0
Notes:
1. The DATA FORMAT in each bus cycle is as follows: I/O7 - I/O0 (Hex). The address format in each bus cycle is as follows:
A11 - A0 (Hex); A11 - A18 (don’t care).
2. Since A11 is don’t care, AAA can be replaced with 2AA.
3. The 16K byte boot sector has the address range 00000H to 03FFFH.
4. Either one of the Product ID Exit commands can be used.
5. SA = sector addresses:
SA = 00000 to 03FFF for BOOT BLOCK
SA = 04000 to 05FFF for PARAMETER BLOCK 1
SA = 06000 to 07FFF for PARAMETER BLOCK 2
SA = 08000 to FFFF for MAIN MEMORY ARRAY BLOCK 1
SA = 10000 to 1FFFF for MAIN MEMORY ARRAY BLOCK 2
SA = 20000 to 2FFFF for MAIN MEMORY ARRAY BLOCK 3
SA = 30000 to 3FFFF for MAIN MEMORY ARRAY BLOCK 4
SA = 40000 to 4FFFF for MAIN MEMORY ARRAY BLOCK 5
SA = 50000 to 5FFFF for MAIN MEMORY ARRAY BLOCK 6
SA = 60000 to 6FFFF for MAIN MEMORY ARRAY BLOCK 7
SA = 70000 to 7FFFF for MAIN MEMORY ARRAY BLOCK 8
Absolute Maximum Ratings
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:
Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
3358A–FLASH–6/03
5
5 Page 
AT49BV040A
Data Polling Characteristics
Symbol Parameter
tDH
tOEH
tOE
tWR
Notes:
Data Hold Time
OE Hold Time
OE to Output Delay(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Data Polling Waveforms
WE
CE
OE
tDH
I/O7
tOEH
tOE
HIGH Z
A0-A18
An An
An
Toggle Bit Characteristics
Symbol Parameter
tDH
tOEH
tOE
tOEHP
tWR
Notes:
Data Hold Time
OE Hold Time
OE to Output Delay(2)
OE High Pulse
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
WE
CE
OE
I/O6
tOEH
tDH tOE
tOEHP
HIGH Z
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit.
The tOEHP specification must be met by the toggling input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
Min
10
10
0
An
Min
10
10
50
0
Typ
tWR
An
Typ
tWR
Max
Max
Units
ns
ns
ns
ns
Units
ns
ns
ns
ns
ns
3358A–FLASH–6/03
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet AT49BV040A-70TI.PDF ] | |
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