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AT49BV1604T 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT49BV1604T은 전자 산업 및 응용 분야에서
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부품번호 AT49BV1604T 기능
기능 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


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AT49BV1604T 데이터시트, 핀배열, 회로
Features
2.7V to 3.3V Read/Write
Access Time - 90 ns
Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout
Fast Word Program Time - 20 µs
Fast Sector Erase Time - 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 25 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
Optional VPP Pin for Fast Programming
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP, CBGA, and µBGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball
µBGA packages. The device has CE, and OE control signals to avoid any bus
(continued)
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
VCCQ
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Optional Power Supply for Faster
Program/Erase Operations
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Output Power Supply
Don’t Connect
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604
AT49BV1604T
AT49BV1614
AT49BV1614T
Rev. 0925H–08/99
1




AT49BV1604T pdf, 반도체, 판매, 대치품
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
RESET: A RESET input pin is provided to ease some sys-
tem applications. When RESET is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedance state. When
a high level is reasserted on the RESET pin, the device
returns to the Read or Standby mode, depending upon the
state of the control inputs. By applying a 12V ± 0.5V input
signal to the RESET pin any sector can be reprogrammed
even if the sector lockout feature has been enabled (see
Sector Programming Lockout Override section).
ERASURE: Before a byte/word can be reprogrammed, it
must be erased. The erased state of memory bits is a logi-
cal “1”. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by
using the Sector Erase commands.
CHIP ERASE: The entire device can be erased at one time
by using the 6-byte chip erase software code. After the chip
erase has been initiated, the device will internally time the
erase operation so that no external clocks are required.
The maximum time to erase the chip is tEC.
If the sector lockout has been enabled, the Chip Erase will
not erase the data in the sector that has been locked; it will
erase only the unprotected sectors. After the chip erase,
the device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the
device is organized into forty sectors (SA0 - SA39) that can
be individually erased. The Sector Erase command is a six
bus cycle operation. The sector address is latched on the
falling WE edge of the sixth cycle while the 30H data input
command is latched on the rising edge of WE. The sector
erase starts after the rising edge of WE of the sixth cycle.
The erase operation is internally controlled; it will automati-
cally time to completion. The maximum time to erase a
section is tSEC. When the sector programming lockout fea-
ture is not enabled, the sector will erase (from the same
sector erase command). Once a sector has been pro-
tected, data in the protected sectors cannot be changed
unless the RESET pin is taken to 12V ± 0.5V. An attempt to
erase a sector that has been protected will result in the
operation terminating in 2 µs.
BYTE/WORD PROGRAMMING: Once a memory block is
erased, it is programmed (to a logical “0”) on a byte-by-byte
or on a word-by-word basis. Programming is accomplished
via the internal device command register and is a 4-bus
cycle operation. The device will automatically generate the
required internal program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0”
cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is completed after
the specified tBP cycle time. The DATA polling feature or
the toggle bit feature may be used to indicate the end of a
program cycle.
SECTOR PROGRAMMING LOCKOUT: Each sector has a
programming lockout feature. This feature prevents pro-
gramming of data in the designated sectors once the
feature has been enabled. These sectors can contain
secure code that is used to bring up the system. Enabling
the lockout feature will allow the boot code to stay in the
device while data in the rest of the device is updated. This
feature does not have to be activated; any sector’s usage
as a write protected region is optional to the user.
Once the feature is enabled, the data in the protected sec-
tors can no longer be erased or programmed when input
levels of 5.5V or less are used. Data in the remaining sec-
tors can still be changed through the regular programming
method. To activate the lockout feature, a series of six pro-
gram commands to specific addresses with specific data
must be performed. Please refer to the Command Defini-
tions table.
SECTOR LOCKOUT DETECTION: A software method is
available to determine if programming of a sector is locked
out. When the device is in the software product identifica-
tion mode (see Software product Identification Entry and
Exit sections) a read from address location 00002H within a
sector will show if programming the sector is locked out. If
the data on I/O0 is low, the sector can be programmed; if
the data on I/O0 is high, the program lockout feature has
been enabled and the sector cannot be programmed. The
software product identification exit code should be used to
return to standard operation.
SECTOR PROGRAMMING LOCKOUT OVERRIDE: The
user can override the sector programming lockout by taking
the RESET pin to 12V ± 0.5V. By doing this protected data
can be altered through a chip erase, sector erase or
byte/word programming. When the RESET pin is brought
back to TTL levels the sector programming lockout feature
is again active.
ERASE SUSPEND/ERASE RESUME: The erase suspend
command allows the system to interrupt a sector erase
operation and then program or read data from a different
sector within the same plane. Since this device has a dual
plane architecture, there is no need to use the erase
4 AT49BV1604(T)/1614(T)

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AT49BV1604T 전자부품, 판매, 대치품
AT49BV1604(T)/1614(T)
AT49BV1604/1614 - Sector Address Table
Plane
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
Size (Bytes/Words)
8K/4K
8K/4K
8K/4K
8K/4K
8K/4K
8K/4K
8K/4K
8K/4K
32K/16K
32K/16K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
64K/32K
x8
Address Range (A19 - A-1)
000000 - 001FFF
002000 - 003FFF
004000 - 005FFF
006000 - 007FFF
008000 - 009FFF
00A000 - 00BFFF
00C000 - 00DFFF
00E000 - 00FFFF
010000 - 017FFF
018000 - 01FFFF
020000 - 02FFFF
030000 - 03FFFF
040000 - 04FFFF
050000 - 05FFFF
060000 - 06FFFF
070000 - 07FFFF
080000 - 08FFFF
090000 - 09FFFF
0A0000 - 0AFFFF
0B0000 - 0BFFFF
0C0000 - 0CFFFF
0D0000 - 0DFFFF
0E0000 - 0EFFFF
0F0000 - 0FFFFF
100000 - 10FFFF
110000 - 11FFFF
120000 - 12FFFF
130000 - 13FFFF
140000 - 14FFFF
150000 - 15FFFF
160000 - 16FFFF
170000 - 17FFFF
180000 - 18FFFF
190000 - 19FFFF
1A0000 - 1AFFFF
1B0000 - 1BFFFF
1C0000 - 1CFFFF
1D0000 - 1DFFFF
1E0000 - 1EFFFF
1F0000 - 1FFFFF
x16
Address Range (A19 - A0)
00000 - 00FFF
01000 - 01FFF
02000 - 02FFF
03000 - 03FFF
04000 - 04FFF
05000 - 05FFF
06000 - 06FFF
07000 - 07FFF
08000 - 0BFFF
0C000 - 0FFFF
10000 - 17FFF
18000 - 1FFFF
20000 - 27FFF
28000 - 2FFFF
30000 - 37FFF
38000 - 3FFFF
40000 - 47FFF
48000 - 4FFFF
50000 - 57FFF
58000 - 5FFFF
60000 - 67FFF
68000 - 6FFFF
70000 - 77FFF
78000 - 7FFFF
80000 - 87FFF
88000 - 8FFFF
90000 - 97FFF
98000 - 9FFFF
A0000 - A7FFF
A8000 - AFFFF
B0000 - B7FFF
B8000 - BFFFF
C0000 - C7FFF
C8000 - CFFFF
D0000 - D7FFF
D8000 - DFFFF
E0000 - E7FFF
E8000 - EFFFF
F0000 - F7FFF
F8000 - FFFFF
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
AT49BV1604

16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory

ATMEL Corporation
ATMEL Corporation
AT49BV1604

16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

ATMEL Corporation
ATMEL Corporation

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