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AT49BV512-12TC 데이터시트 PDF




ATMEL Corporation에서 제조한 전자 부품 AT49BV512-12TC은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AT49BV512-12TC 자료 제공

부품번호 AT49BV512-12TC 기능
기능 512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory
제조업체 ATMEL Corporation
로고 ATMEL Corporation 로고


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AT49BV512-12TC 데이터시트, 핀배열, 회로
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 120 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30 µs/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 120 ns with power dissipation of just 90 mW over the
commercial temperature range. When the devices are deselected, the CMOS standby
current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV512 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing
the entire 1 megabit of memory and then programming on a byte by byte basis. The
(continued)
Pin Configurations
DIP Top View
Pin Name Function
A0 - A15
Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
512K (64K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV512
Rev. 1026C–09/98
1




AT49BV512-12TC pdf, 반도체, 판매, 대치품
DC and AC Operating Range
Operating Temperature (Case)
VCC Power Supply
Com.
Ind.
AT49BV512-12
0°C - 70°C
-40°C - 85°C
2.7V to 3.6V
Operating Modes
Mode
CE OE WE
Ai
Read
Program(2)
Standby/Write Inhibit
Program Inhibit
Program Inhibit
Output Disable
Product Identification
VIL VIL VIH
VIL VIH VIL
VIH X(1) X
X X VIH
X VIL X
X VIH X
Ai
Ai
X
Hardware
VIL VIL VIH A1 - A15 = VIL, A9 = VH,(3)
A0 = VIL
A1 - A15 = VIL, A9 = VH,(3)
A0 = VIH
Software(5)
A0 = VIL, A1 - A15 = VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
A0 = VIH, A1 - A15 = VIL
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 03H.
5. See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol Parameter
ILI
ILO
ISB1
ISB2
ICC(1)
VIL
VIH
VOL
VOH
Note:
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1. In the erase mode, ICC is 50 mA.
Condition
VIN = 0V to VCC
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC
CE = 2.0V to VCC
f = 5 MHz; IOUT = 0 mA
IOL = 2.1 mA
IOH = -100 µA; VCC = 3.0V
AT49BV512-15
0°C - 70°C
-40°C - 85°C
2.7V to 3.6V
I/O
DOUT
DIN
High Z
High Z
Manufacturer Code(4)
Device Code(4)
Manufacturer Code(4)
Device Code(4)
Min Max Units
10 µA
10 µA
50 µA
1 mA
25 mA
0.6 V
2.0 V
0.45 V
2.4 V
4 AT49BV512

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AT49BV512-12TC 전자부품, 판매, 대치품
AT49BV512
Program Cycle Characteristics
Symbol
tBP
tAS
tAH
tDS
tDH
tWP
tWPH
tEC
Parameter
Byte Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
Program Cycle Waveforms
OE
Min Typ Max
30
0
100
100
0
200
200
10
PROGRAM CYCLE
CE
tWP
WE
tAS tAH
A0-A15
5555
2AAA
tDS
DATA
AA 55
tWPH
tDH
5555
ADDRESS
A0
INPUT
DATA
tBP
Chip Erase Cycle Waveforms
OE
CE
tWP tWPH
WE
tAS tAH tDH
A0-A15
5555
2AAA
5555
5555
2AAA
5555
tDS tEC
DATA
AA
BYTE 0
55
BYTE 1
80
BYTE 2
AA
BYTE 3
55
BYTE 4
10
BYTE 5
Note: OE must be high only when WE and CE are both low.
Units
µs
ns
ns
ns
ns
ns
ns
seconds
7

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