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부품번호 | AT49BV8192-15RI 기능 |
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기능 | 8-Megabit 512K x 16 CMOS Flash Memory | ||
제조업체 | ATMEL Corporation | ||
로고 | |||
전체 13 페이지수
Features
• Low Voltage Operation
– 2.7V Read
– 5V Program/Erase
• Fast Read Access Time - 120 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 488K Words (976K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 30 µs/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized
as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50
µA. (continued)
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET
Reset
VPP
Program/Erase Power
Supply
I/O0 - I/O15
Data
Inputs/Outputs
NC No Connect
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
WE NC
RESET
VPP NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
14 13
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
SOIC (SOP)
VPP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 RESET
43 WE
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 NC
32 GND
31 I/O15
30 I/O7
29 I/O14
28 I/O6
27 I/O13
26 I/O5
25 I/O12
24 I/O4
23 VCC
8-Megabit
(512K x 16)
CMOS Flash
Memory
AT49BV8192
AT49BV8192T
AT49LV8192
AT49LV8192T
0978B-A–11/97
1
TOGGLE BIT: In addition to DATA polling the
AT49BV/LV8192 provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop tog-
gling and valid data will be read. Examining the toggle bit
may begin at any time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49BV/LV8192 in the following ways: (a) VCC sense: if
VCC is below 1.8V (typical), the program function is inhib-
ited. (b) VCC power on delay: once VCC has reached the
VCC sense level, the device will automatically time out 10
ms (typical) before programming. (c) Program inhibit: hold-
ing any one of OE low, CE high or WE high inhibits pro-
gram cycles. (d) Noise filter: pulses of less than 15 ns (typi-
cal) on the WE or CE inputs will not initiate a program
cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE, and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to VCC + 0.6V.
4 AT49BV/LV8192(T)
4페이지 AT49BV/LV8192(T)
AC Read Characteristics
Symbol
tACC
tCE(1)
tOE(2)
tDF(3)(4)
tOH
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE
or Address, whichever occurred first
AC Read Waveforms(1)(2)(3)(4)
AT49BV/LV8192-12
Min Max
120
120
0 50
0 30
AT49BV/LV8192-15
Min Max
150
150
0 100
0 50
AT49BV/LV8192-20
Min Max
200
200
0 100
0 50
Units
ns
ns
ns
ns
0 0 0 ns
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance
(f = 1 Mhz, T = 25°C)(1)
Typ Max
CIN
COUT
Note:
46
8 12
1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
7
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ AT49BV8192-15RI.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AT49BV8192-15RC | 8-Megabit 512K x 16 CMOS Flash Memory | ATMEL Corporation |
AT49BV8192-15RI | 8-Megabit 512K x 16 CMOS Flash Memory | ATMEL Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |