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Datasheet AF2301PW Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1AF2301PW20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet
2AF2301PWA20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet
3AF2301PWLA20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet


AF2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1AF2Pentode

page 1 2 3 AF2 sheet 2 2 FP date 1947.12.01 1953.12.12 1999.06.26
Philips
Philips
data
2AF2010ANTI-SULFURATED CHIP RESISTORS

DATA SHEET ANTI-SULFURATED CHIP RESISTORS AF series 5%, 1% sizes 0201/0402/0603/0805/1206/1210/1218/2010/2512 RoHS compliant & Halogen free Product specification – September 27, 2013 V.1 Chip Resistor Surface Mount AF SERIES 0201 to 2512 Product specification 2 8 SCOPE This specification descr
YAGEO
YAGEO
data
3AF2301P20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet
4AF2301PW20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet
5AF2301PWA20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet
6AF2301PWLA20V P-Channel Enhancement Mode MOSFET

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), [email protected], [email protected] =130
ETC
ETC
mosfet
7AF2302N20V N-Channel Enhancement Mode MOSFET

AF2302N 20V N-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = 20V RDS (on), [email protected], [email protected] =65mΩ.
Anachip
Anachip
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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