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부품번호 | AFM08P2-000 기능 |
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기능 | Ka Band Power GaAs MESFET Chip | ||
제조업체 | Alpha Industries | ||
로고 | |||
Ka Band Power GaAs MESFET Chip
AFM08P2-000
Features
s 24 dBm Output Power @ 18 GHz
s High Associated Gain, 8.5 dB @ 18 GHz
s High Power Added Efficiency, 20%
s Broadband Operation, DC–40 GHz
s 0.25 µm Ti/Pd/Au Gates
s Passivated Surface
s Through-Substrate Via Hole Grounding
Description
The AFM08P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a total
gate periphery of 800 µm. The device has excellent gain
and power performance through 40 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. It employs
Ti/Pd/Au gate metallization and surface passivation to
ensure a rugged, reliable part. Through-substrate via holes
are incorporated into the chip to facilitate low inductance
grounding of the source for improved high frequency and
high gain performance.
Drain
0.110 mm
Gate
0.327 mm
0.655 mm
Chip thickness = 0.1 mm.
0.110 mm
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (VDS)
Gate to Source Voltage (VGS)
Drain Current (IDS)
Gate Current (IGS)
Total Power Dissipation (PT)
Storage Temperature (TST)
Channel Temperature (TCH)
Value
6V
-4 V
IDSS
2 mA
1.4 W
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (IDSS)
Transconductance (gm)
Pinch-off Voltage (VP)
Gate to Drain
Breakdown Voltage (Vbgd)
Output Power at 1 dB
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
Power Added Efficiency (ηadd)
Output Power at 1 dB
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
Power Added Efficiency (ηadd)
Thermal Resistance (ΘJC)
Test Conditions
VDS = 2 V, VGS = 0 V
VDS = 5 V, IDS = 2.0 mA
IGD = 800 µA
VDS = 5 V, IDS = 140 mA, F = 18 GHz
VDS = 5 V, IDS = 140 mA, F = 30 GHz
TBASE = 25°C
Min.
175.0
120.0
1.0
8.0
Typ.
265.0
160.0
3.0
12.0
24.0
8.5
20.0
23.0
4.5
10.0
Max.
360.0
5.0
120.0
Unit
mA
mS
-V
-V
dBm
dB
%
dBm
dB
%
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 6/99A
1
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구 성 | 총 3 페이지수 | ||
다운로드 | [ AFM08P2-000.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AFM08P2-000 | Ka Band Power GaAs MESFET Chip | Alpha Industries |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |