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PDF AHK6030LX Data sheet ( Hoja de datos )
| Número de pieza | AHK6030LX | |
| Descripción | 30V N-Channel Power MOSFET | |
| Fabricantes | Advanced Analogic Technologies | |
| Logotipo |  |
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General Description
Utilizing Analogic Tech’s state-of-the-art
TrenchDMOSâ process, the AHK6030LX sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Gate charge and RDS(ON) have been optimized and
package inductance minimized to provide high
efficiency for DC-DC.
Applications
•= DC-DC converters for CPU’s
•= High Current Load Switch
AHK6030LX
30V N-Channel Power MOSFET
Features
PWMSwitchTM
•= VDS(MAX) = 30V
•= ID(MAX)(a) = 52 A @ 25°C
•= IAPP(MAX) = 20A in typical computer application
•= Low Gate Charge
•= Low RDS(ON):
10.5 mΩ=(max), 9.5 mΩ=(typ)@VGS = 10V
18 mΩ= (max), 14 mΩ=(typ)@ VGS = 4.5V
DPAK-L Package DPAK Package
Drain-Connected Tab
Drain-Connected Tab
GS
GS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C (a)
Pulsed Drain Current (a)
Continuous Source Current (Source-Drain Diode) (a)
Maximum Power Dissipation (a)
Operating Junction and Storage Temperature Range
TA = 25°C
TA = 70°C
Value
30
±20
±52
±56
23
42
27
-55 to 150
Units
V
A
W
°C
Thermal Resistance
RθJA
RθJC
Maximum Junction-to-Ambient (a)
Maximum Junction-to-Case(a)
96 °C/W
3.6 °C/W
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
9-19
6030LX.2001.05.0.91
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AHK6030LX.PDF ] | |
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