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부품번호 | 1MBI400NP-120 기능 |
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기능 | IGBT MODULE ( N series ) | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 4 페이지수
IGBT MODULE ( N series )
n Outline Drawing
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
V
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Continuous
1ms
Continuous
1ms
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
400
800
400
800
3100
+150
-40 ∼ +125
A
W
°C
°C
Isolation Voltage
A.C. 1min.
Vis
Mounting *1
2500
3.5
V
Screw Torque
Terminals *2
4.5
Nm
Terminals *3
1.7
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
ICES
IGES
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
Diode Forward On-Voltage
Reverse Recovery Time
VF
trr
Test Conditions
VGE=0V VCE=1200V
VCE=0V VGE=± 20V
VGE=20V IC=400mA
VGE=15V IC=400A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=400A
VGE=± 15V
RG=1.8Ω
IF=400A VGE=0V
IF=400A
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
4.5
Typ.
64000
23200
20640
0.75
0.25
1.05
0.35
Max.
4.0
60
7.5
3.3
1.2
0.6
1.5
0.5
3.0
350
Units
mA
µA
V
V
pF
µs
V
ns
Min.
Typ.
0.0125
Max.
0.04
0.12
Units
°C/W
Switching loss vs. Collector current
VCC=600V, RG=1.8Ω , VGE=±15V
175
150
Eoff 125°C
125
100
75
50
25
0
0
Eoff 25°C
Eon 125°C
Err 125°C
Eon 25°C
Err 25°C
100 200 300 400 500 600 700 800
Collector Current : IC [A]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
100
C ies
10
C oes
C res
1
0 5 10 15 20 25 30 35
Collector-Emitter Voltage : VCE [V]
Fuji Electric GmbH
Lyoner Straße 26
D-60528 Frankfurt/M
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House
2 Chalkhill Road Hammersmith
London W6 8DW, UK
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
Specification is subject to change without notice
May 97
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ 1MBI400NP-120.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
1MBI400NP-120 | IGBT MODULE ( N series ) | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |