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ADP3820ART-41 데이터시트 PDF




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부품번호 ADP3820ART-41 기능
기능 Lithium-Ion Battery Charger
제조업체 Analog Devices
로고 Analog Devices 로고


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ADP3820ART-41 데이터시트, 핀배열, 회로
a
FEATURES
؎1% Total Accuracy
630 A Typical Quiescent Current
Shutdown Current: 1 A (Typical)
Stable with 10 F Load Capacitor
4.5 V to 15 V Input Operating Range
Integrated Reverse Leakage Protection
6-Lead SOT-23-6 and 8-Lead SO-8 Packages
Programmable Charge Current
–20؇C to +85؇C Ambient Temperature Range
Internal Gate-to-Source Protective Clamp
APPLICATIONS
Li-Ion Battery Chargers
Desktop Computers
Hand-Held Instruments
Cellular Telephones
Battery Operated Devices
Lithium-Ion
Battery Charger
ADP3820
FUNCTIONAL BLOCK DIAGRAM
SD
VREF
BIAS
+
50mV
VIN
IS
GATE
VOUT
ADP3820
GND
GENERAL DESCRIPTION
The ADP3820 is a precision single cell Li-Ion battery charge
controller that can be used with an external Power PMOS de-
vice to form a two-chip, low cost, low dropout linear battery
charger. It is available in two voltage options to accommodate
Li-Ion batteries with coke or graphite anodes. The ADP3820’s
high accuracy (± 1%) low shutdown current (1 µA) and easy
charge current programming make this device especially attrac-
tive as a battery charge controller.
Charge current can be set by an external resistor. For example,
50 mof resistance can be used to set the charge current to
1 A. Additional features of this device include foldback current
limit, overload recovery, and a gate-to-source voltage clamp to
protect the external MOSFET. The proprietary circuit also
minimizes the reverse leakage current from the battery if the
input voltage of the charger is disconnected. This feature elimi-
nates the need for an external serial blocking diode.
The ADP3820 operates with a wide input voltage range from
4.5 V to 15 V. It is specified over the industrial temperature
range of –20°C to +85°C and is available in the ultrasmall
6-lead surface mount SOT-23-6 and 8-lead SOIC packages.
VIN
+5V C1 +
10F –
R1
10k
RS
50m
NDP6020P
IS GATE
VIN VOUT
ADP3820-xx
SD
GND
IO = 1A
VOUT
Li-Ion
BATTERY
22F
Figure 1. Li-Ion Charger Application Circuit
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999




ADP3820ART-41 pdf, 반도체, 판매, 대치품
ADP3820–Typical Performance Characteristics
4.110
4.105
VIN = 5.1V
4.100
4.095
4.090
0
200 400 600 800
ILOAD – mA
Figure 2. VOUT vs. ILOAD (VIN = 5.1 V)*
1000
0.760
0.740
ILOAD = 10mA
0.720
0.700
0.680
0.660
0.640
0.620
5
7 9 11 13
INPUT VOLTAGE – V
Figure 5. IGND vs. VIN (ILOAD = 10 mA)*
15
4.110
ILOAD = 1A
4.105
0.900
ILOAD = 1A
0.850
4.100
0.800
4.095
0.750
4.090
5
7 9 11 13
INPUT VOLTAGE – V
Figure 3. VOUT vs. VIN (ILOAD = 1 A)*
15
0.700
5
7 9 11 13
INPUT VOLTAGE – V
Figure 6. IGND vs. VIN (ILOAD = 1 A)*
15
4.110
ILOAD = 10mA
4.105
4.100
4.095
4.090
5
7 9 11 13
INPUT VOLTAGE – V
Figure 4. VOUT vs. VIN (ILOAD = 10 mA)*
15
1.200
1.100
VIN = 5.1V
1.000
0.900
0.800
0.700
0.600
0.500
0.001
0.1
ILOAD – mA
10
Figure 7. IGND vs. ILOAD (VIN = 5.1 V)*
1000
*Reference Figure 1.
–4–
REV. A

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ADP3820ART-41 전자부품, 판매, 대치품
ADP3820
The current sense resistor for this application:
RS = VS/IO = 0.05/0.5 = 100 m
FET Selection
The type and size of the pass transistor are determined by the
threshold voltage, input-output voltage differential and load
current. The selected PMOS must satisfy the physical and ther-
mal design requirements. To ensure that the maximum VGS
provided by the controller will turn on the FET at worst case
conditions, (i.e., temperature and manufacturing tolerances) the
maximum available VGS must be determined. Maximum VGS is
calculated as follows:
where
IOUTMAX
RS
VBE
VGS = VIN VBE IOUTMAX × RS
= Maximum Output Current
= Current Sense Resistor
~ 0.7 V (Room Temperature)
~ 0.5 V (Hot)
~ 0.9 V (Cold)
For example:
VIN = 5 V, and IOUTMAX = 1 A,
VGS = 5 V – 0.7 V – 1 A × 50 m= 4.25 V
If VGS < 5 V, logic level FET should be considered.
If VGS > 5 V, either logic level or standard MOSFET can be
used.
The difference between VIN and VO (VDS) must exceed the
voltage drop due to the sense resistor plus the ON-resistance
of the FET at the maximum charge current. The selected
MOSFET must satisfy these criteria; otherwise, a different pass
device should be used.
VDS = VIN VO = 5 V – 4.2 V = 0.8 V
The maximum RDS(ON) required at the available gate drive (VDR)
and Drain-to-Source voltage (VDS) is:
RDS(ON) = VDS/IOUTMAX
From the Drain-to Source current vs. Drain-to-Source voltage
vs. gate drive graph off the MOSFET data sheet, it can be de-
termined if the above calculated RDS(ON) is higher than the graph
indicates. However, the value read from the MOSFET data
sheet graph must be adjusted based on the junction temperature
of the MOSFET. This adjustment factor can be obtained from
the normalized RDS(ON) vs. junction temperature graph in the
MOSFET data sheet.
External Capacitors
The ADP3820 is stable with or without a battery load, and
virtually any good quality output filter capacitors can be used
(anyCAP™), independent of the capacitor’s minimum ESR
(Effective Series Resistance) value. The actual value of the
capacitor and its associated ESR depends on the gm and capaci-
tance of the external PMOS device. A 10 µF tantalum or alumi-
num electrolytic capacitor at the output is sufficient to ensure
stability for up to a 10 A output current.
Shutdown Mode
Applying a TTL high signal to the SD pin or tying it to the
input pin will enable the output. Pulling this pin low or tying
it to ground will disable the output. In shutdown mode, the
controller’s quiescent current is reduced to less than 1 µA.
Gate-to-Source Clamp
A 6 V gate-to-source voltage clamp is provided by the ADP3820 to
protect most MOSFET gates in the event the VIN > VGS allowed
and the output is suddenly shorted to ground. This allows use of
the new, low RDS(ON) MOSFETs.
Short Circuit Protection
The power FET is protected during short circuit conditions
with a foldback type of current limiting that significantly re-
duces the current. See Figure 13 for foldback current limit
information.
Current Sense Resistor
Current limit is achieved by setting an appropriate current sense
resistor (RS) across the current limit threshold voltage. Current
limit sense resistor, RS, is calculated as shown above. Proper
derating is advised to select the power dissipation rating of the
resistor.
The simplest and cheapest sense resistor for high current appli-
cations, (i.e., Figure 1) is a PCB trace. However, the tempera-
ture dependence of the copper trace and the thickness tolerances of
the trace must be considered in the design. The resistivity of
copper has a positive temperature coefficient of +0.39%/°C.
Copper’s Tempco, in conjunction with the proportional-to-
absolute temperature (± 0.3%) current limit voltage, can provide
an accurate current limit. Table I provides the typical resistance
values for PCB copper traces. Alternately, an appropriate sense
resistor, such as surface mount sense resistors, available from
KRL, can be used.
Table I. Printed Circuit Copper Resistance
Conductor
Thickness
1/2oz/ft2
(18 µm)
1oz/ft2
(35 µm)
2oz/ft2
(70 µm)
3oz/ft2
(106 µm)
Conductor
Width/Inch
0.025
0.050
0.100
0.200
0.500
0.025
0.050
0.100
0.200
0.500
0.025
0.050
0.100
0.200
0.500
0.025
0.050
0.100
0.200
0.500
Resistance
m/In
39.3
19.7
9.83
4.91
1.97
19.7
9.83
4.91
2.46
0.98
9.83
4.91
2.46
1.23
0.49
6.5
3.25
1.63
0.81
0.325
anyCAP is a trademark of Analog Devices, Inc.
REV. A
–7–

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