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ADR439 데이터시트 PDF




Analog Devices에서 제조한 전자 부품 ADR439은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 ADR439 기능
기능 Ultralow Noise XFET Voltage References with Current Sink and Source Capability
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ADR439 데이터시트, 핀배열, 회로
Ultralow Noise XFET® Voltage References
with Current Sink and Source Capability
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
FEATURES
Low noise (0.1 Hz to 10 Hz): 3.5 µV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/°C max
B Grade: 3 ppm/°C max
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V
High output current: +30 mA/20 mA
Wide temperature range: 40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
The ADR43x series is a family of XFET voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using ADI’s patented temperature drift curvature
correction and XFET (eXtra implanted junction FET) technology,
the ADR43x’s voltage change versus temperature nonlinearity is
minimized.
The XFET references operate at lower current (800 µA) and
supply headroom (2 V) than buried-Zener references. Buried-
Zener references require more than 5 V headroom for operations.
The ADR43x XFET references are the only low noise solutions
for 5 V systems.
The ADR43x series has the capability to source up to 30 mA
and sink up to 20 mA of output current. It also comes with a
TRIM terminal to adjust the output voltage over a 0.5% range
without compromising performance. The ADR43x is available
in the 8-lead mini SOIC and 8-lead SOIC packages.
PIN CONFIGURATIONS
TP 1
8 TP
VIN 2 ADR43x 7 NC
NC
3
TOP VIEW
(Not to Scale)
6
VOUT
GND 4
5 TRIM
NC = NO CONNECT
Figure 1. 8-Lead MSOP
(RM Suffix)
TP 1
8 TP
VIN 2 ADR43x 7 NC
NC
3
TOP VIEW
(Not to Scale)
6
VOUT
GND 4
5 TRIM
NC = NO CONNECT
Figure 2. 8-Lead SOIC
(R Suffix)
All versions are specified over the extended industrial tempera-
ture range (−40°C to +125°C).
Table 1. Selection Guide
Model
Accuracy
VOUT (V) (mV)
ADR430B 2.048 ±1
ADR430A 2.048 ±3
ADR431B 2.500 ±1
ADR431A 2.500 ±3
ADR433B 3.000 ±1.4
ADR433A 3.000 ±4
ADR434B 4.096 ±1.5
ADR434A 4.096 ±5
ADR435B 5.000 ±2
ADR435A 5.000 ±6
ADR439B 4.500 ±2
ADR439A 4.500 ±5.4
Temperature Coefficient
(ppm/°C)
3
10
3
10
3
10
3
10
3
10
3
10
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.




ADR439 pdf, 반도체, 판매, 대치품
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR431 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Symbol
VO
VO
VOERR
VOERR
VOERR
VOERR
TCVO
TCVO
TCVO
∆VO/∆VIN
Conditions
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 4.5 V to 18 V
−40°C < TA < +125°C
Load Regulation
∆VO/∆ILOAD
ILOAD = 0 mA to 10 mA, VIN = 5.0 V
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN – VO
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 5.0 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CIN = 0
1,000 h
fIN = 10 kHz
Min
2.499
2.497
4.5
2
Typ
2.500
2.500
1
2
2
5
580
3.5
80
10
40
20
−70
40
Max
2.501
2.503
1
0.04
3
0.13
3
10
10
20
15
15
800
18
Unit
V
V
mV
%
mV
%
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/mA
ppm/mA
µA
µV p-p
nV√Hz
µs
ppm
ppm
dB
mA
V
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 4 of 24

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ADR439 전자부품, 판매, 대치품
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR435 ELECTRICAL CHARACTERISTICS
VIN = 7 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 6.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
Symbol
VO
VO
VOERR
VOERR
VOERR
VOERR
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
Conditions
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 7 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 8 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 8 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10 Hz
1 kHz
CIN = 0
1,000 h
fIN = 10 kHz
Min
4.998
4.994
7
2
Typ
5.000
5.000
1
2
2
5
620
8
115
10
40
20
−70
40
Max
5.002
5.006
2
0.04
6
0.12
3
10
10
20
15
15
800
18
Unit
V
V
mV
%
mV
%
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/mA
ppm/mA
µA
µV p-p
nV/√Hz
µs
ppm
ppm
dB
mA
V
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 7 of 24

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