Datasheet.kr   

AA032P1-00 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 AA032P1-00
기능 30-36 GHz GaAs MMIC Power Amplifier
제조업체 Alpha Industries
로고 Alpha Industries 로고 


전체 2 페이지

		

No Preview Available !

AA032P1-00 데이터시트, 핀배열, 회로
30–36 GHz GaAs MMIC
Power Amplifier
Features
I Single Gate and Drain Biases
I 25 dBm Typical P1 dB Output Power
at 31 GHz
I 11 dB Typical Small Signal Gain
I 0.25 µm Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Description
Alpha’s two-stage reactively-matched Ka band GaAs
MMIC power amplifier has a typical P1 dB of 25 dBm with
10 dB associated gain and 15% power added efficiency
at 31 GHz. The chip uses Alpha’s proven
0.25 µm MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. Single gate and drain bias pads cover both
stages, with the added convenience that the chip can be
wire bonded from either side for either bias. All chips are
screened for gain, output power, efficiency and S-
parameters prior to shipment for guaranteed performance.
A broad range of applications exist in both the military and
commercial areas where high power and gain are
required.
Chip Outline
0.120
AA032P1-00
0.000
0.107
1.143
1.143
2.166
2.179
2.285
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
22 dBm
175°C
Electrical Specifications at 25°C (VDS = 6 V, VGS = -1 V)
Parameter
Condition
Symbol
Drain Current (at Saturation)
Small Signal Gain
F = 30–31, 34–36 GHz
IDS
G
Input Return Loss
F = 30–31, 34–36 GHz
Output Return Loss
F = 30–31, 34–36 GHz
Output Power at 1 dB Gain Compression
F = 31 GHz
Saturated Output Power
F = 31 GHz
Gain at Saturation
Thermal Resistance1
F = 31 GHz
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
RLI
RLO
P1 dB
PSAT
GSAT
ΘJC
Min.
8
24
25
Typ.2
400
11
-7
-8
25
27
8
42
Max.
450
-6
-6
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 12/99A
1






구       성총 2 페이지
다운로드[ AA032P1-00.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
AA032P1-00

30-36 GHz GaAs MMIC Power Amplifier

Alpha Industries
Alpha Industries

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵